Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires

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Catching the electron in action in real space inside a Ge-Si core-shell nanowire transistor.Spin-Orbit Interaction and Induced Superconductivity in a One-Dimensional Hole Gas

P2860

Q47706543-A7690ED7-B277-403B-B809-5FCF1A018F9D Q57285560-16DEF87A-33F9-4A2E-98B4-CCA9E81AAE19

P2860

Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires

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http://www.wikidata.org/entity/Q38754106

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2017 nî lūn-bûn

@nan

2017年の論文

@ja

2017年論文

@yue

2017年論文

@zh-hant

2017年論文

@zh-hk

2017年論文

@zh-mo

2017年論文

@zh-tw

2017年论文

@wuu

2017年论文

@zh

2017年论文

@zh-cn

name

Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires

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type

Item

label

Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires

@en

prefLabel

Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires

@en

P1476

Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires

@en

P2093

A Li

http://www.w3.org/2001/XMLSchema#string

F A Zwanenburg

http://www.w3.org/2001/XMLSchema#string

J Ridderbos

http://www.w3.org/2001/XMLSchema#string

M Brauns

http://www.w3.org/2001/XMLSchema#string

P M Koenraad

http://www.w3.org/2001/XMLSchema#string

T T Nguyen

http://www.w3.org/2001/XMLSchema#string

P2860

Ge/Si nanowire heterostructures as high-performance field-effect transistors

Direct measurement of coherency limits for strain relaxation in heteroepitaxial core/shell nanowires.

Synthesis and strain relaxation of Ge-core/Si-shell nanowire arrays.

Inhibiting strain-induced surface roughening: dislocation-free Ge/Si and Ge/SiGe core-shell nanowires.

Direct observation of nanoscale size effects in Ge semiconductor nanowire growth.

A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor.

Ge/Si nanowire mesoscopic Josephson junctions.

Performance analysis of a Ge/Si core/shell nanowire field-effect transistor.

Radial modulation doping in core-shell nanowires.

P304

2259-2264

http://www.w3.org/2001/XMLSchema#string

P31

scholarly article

P356

10.1021/ACS.NANOLETT.6B04891

http://www.w3.org/2001/XMLSchema#string

P407

English

P433

http://www.w3.org/2001/XMLSchema#string

P478

http://www.w3.org/2001/XMLSchema#string

P50

P577

2017-02-23T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P698

28231017

http://www.w3.org/2001/XMLSchema#string

P921

nanowire

P932

5391496

http://www.w3.org/2001/XMLSchema#string

Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires

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P2860

P2860

Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires

description

name

type

label

prefLabel

P1433

P1476

P2093

P2860

P304

P31

P356

P407

P433

P478

P50

P577

P698

P921

P932

P356

P1433

P1476

P2093

P2860

P304

P31

P356

P407

P433

P478

P50

P577

P698

P921

P932