Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons.
about
Spin-selectable, region-tunable negative differential resistance in graphene double ferromagnetic barriers.Width-Dependent Band Gap in Armchair Graphene Nanoribbons Reveals Fermi Level Pinning on Au(111).Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons.Nanostructured Graphene: An Active Component in Optoelectronic Devices.On-surface synthesis of a nitrogen-embedded buckybowl with inverse Stone-Thrower-Wales topology.Measuring the Density of States of the Inner and Outer Wall of Double-Walled Carbon Nanotubes.
P2860
Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons.
description
2017 nî lūn-bûn
@nan
2017年の論文
@ja
2017年論文
@yue
2017年論文
@zh-hant
2017年論文
@zh-hk
2017年論文
@zh-mo
2017年論文
@zh-tw
2017年论文
@wuu
2017年论文
@zh
2017年论文
@zh-cn
name
Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons.
@en
type
label
Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons.
@en
prefLabel
Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons.
@en
P2093
P2860
P50
P1476
Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons.
@en
P2093
Andrew Fairbrother
Byung Yong Choi
Felix Fischer
Jeffrey Bokor
Jordan Lear
Juan Pablo Llinas
Nicholas Kau
Pascal Ruffieux
Rohit Braganza
P2860
P2888
P356
10.1038/S41467-017-00734-X
P407
P50
P577
2017-09-21T00:00:00Z
P698
P818
1605.06730