about
Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole ContactsNear-unity photoluminescence quantum yield in MoS₂.Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures.New Mo6 Te6 Sub-Nanometer-Diameter Nanowire Phase from 2H-MoTe2.Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces.Growth of a two-dimensional dielectric monolayer on quasi-freestanding graphene.Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides.Schottky Barrier Height of Pd/MoS2 Contact by Large Area Photoemission Spectroscopy.Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing.Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors.Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure.Surface Analysis of WSe2 Crystals: Spatial and Electronic Variability.Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures.Partially Fluorinated Graphene: Structural and Electrical Characterization.Manganese Doping of Monolayer MoS2: The Substrate Is Critical.Interface properties of CVD grown graphene transferred onto MoS2(0001).Atomically thin heterostructures based on single-layer tungsten diselenide and graphene.Direct observation of interlayer hybridization and Dirac relativistic carriers in graphene/MoS₂ van der Waals heterostructures.Seeding atomic layer deposition of alumina on graphene with yttria.Impact of intrinsic atomic defects on the electronic structure of MoS2 monolayers.Fermi Level Manipulation through Native Doping in the Topological Insulator BiSeCombined Surface Science and DFT Study of the Adsorption of Dinitrotoluene (2,4-DNT) on Rutile TiO2(110): Molecular Scale Insight into Sensing of ExplosivesHigh-κ Dielectric on ReS₂: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al₂O₃Pseudomorphy, surface alloys and the role of elementary clusters on the domain orientations in the Cu/Al13Co4(100) systemAl2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface StudyHfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxyDefects and domain boundaries in self-assembled terephthalic acid (TPA) monolayers on CVD-grown graphene on Pt(111)Defect-dominated doping and contact resistance in MoS2Surface Defects on Natural MoS2Correction to Manganese Doping of Monolayer MoS2: The Substrate Is CriticalHole contacts on transition metal dichalcogenides: interface chemistry and band alignmentsInfluence of hydroxyls on Pd atom mobility and clustering on rutile TiO(2)(011)-2 × 1Surface chemistry of 2-propanol and O2 mixtures on SnO2(110) studied with ambient-pressure x-ray photoelectron spectroscopyHigh-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth
P50
Q28829109-2C9A407D-A641-4D49-8991-6549A1881A15Q35854343-54A9B1BB-C159-48A5-A9F0-DD15C3C12D91Q36018652-B7C96FEB-EC30-499E-A9CE-2E06549A3DBBQ38744932-56AD0467-EEA6-4E85-A3E7-EB160BCEEB15Q38971492-48CE9D96-B127-4333-BAFA-F95D2EBDE45CQ45757057-F874EF20-4B65-4FE1-95BB-B25E0D4F2A15Q46234147-81C8B275-A5C3-4772-93CE-13CC57C8616AQ47182052-5F414190-A3D8-48FE-8722-11198BF1B849Q47369160-C8A54E90-C0E4-4E06-8895-CBB4337900A0Q48185306-112E2D83-20CE-49E3-9787-F94A1455BEA4Q49135068-B172670D-9329-4F97-BC6A-1991B764B6D3Q51171397-2CA4A6F2-ED80-4432-826F-B14D4B3E077DQ51373248-A277EA81-EC6B-42A6-858E-58E8F38C194DQ51543978-A6492A85-C7E0-44A7-8D9F-60E8CBB3F0E2Q51726800-946AE0D2-18F2-439D-8447-4DB4F73DD81BQ53086967-E690B230-29B8-4A39-991C-B78E54136E0DQ53251537-32F280E6-079E-42FA-83AE-8FD074ADA781Q53327338-AAE1E802-C0AE-413E-B851-CDC0809B105CQ53348266-8D6A60AA-0C89-443A-BF3B-E45B37DEB3E4Q53464410-D839B32A-F761-452C-9A31-6CE24FF8C360Q56362186-D267325E-E5E0-4267-A8D3-7B4011EA56E8Q62117666-34574EEB-6787-43F4-AD07-C83D09121C75Q64100228-01DDE685-A257-4E3C-A23A-857ED1452284Q85064808-C14B0CB0-5F53-411C-ABD8-F56EF5BDC02DQ85224027-3BD5EACE-74E3-41A0-8113-07544831F637Q86249559-328CD494-59A0-4A83-BC4F-9EE41432645DQ86687040-25F7083C-EB73-4267-B549-3BA04DCABF9AQ87208958-0593C787-B2B8-44D6-9FBA-3D014EA1F56AQ87319870-2D27B559-360E-4A8A-A535-EE7BC75BE97DQ87349470-21EC8F5B-D8AE-4FDA-A8DD-85A9390FB657Q87813815-5B00C6CD-3603-4DE6-9272-2CB95801FB1DQ87829409-734C3DD3-B2A1-41FE-8460-545926E14101Q89608232-065D858E-78C4-4252-82A9-90DF51358CE2Q90325528-BA725658-DE7B-4A08-BEFA-6673ADFBD7EB
P50
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հետազոտող
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Rafik Addou
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Rafik Addou
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Rafik Addou
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P1053
C-8992-2013
P106
P1153
34167526300
P31
P3829
P496
0000-0002-5454-0315