about
Advanced scanning probe lithographyInteracting ions in biophysics: real is not idealOne hundred fold increase in current carrying capacity in a carbon nanotube-copper compositeA two-atom electron pump.Big-deep-smart data in imaging for guiding materials design.Site-selective substitutional doping with atomic precision on stepped Al (111) surface by single-atom manipulation.Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application.Ab initio electronic properties of dual phosphorus monolayers in silicon.New avenues to an old material: controlled nanoscale doping of germanium.Atomistic modeling of metallic nanowires in silicon.Molecular decision trees realized by ultrafast electronic spectroscopyTuning the electron transport at single donors in zinc oxide with a scanning tunnelling microscope.Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devicesSilicon epitaxy on H-terminated Si (100) surfaces at 250 °C.Probing the electrical switching of a memristive optical antenna by STEM EELS.A quantum spin-probe molecular microscope.Atomic-scale sensing of the magnetic dipolar field from single atoms.Measuring central-spin interaction with a spin-bath by pulsed ENDOR: Towards suppression of spin diffusion decoherenceNanometer-scale mapping of irreversible electrochemical nucleation processes on solid Li-ion electrolytes.Quantum simulation of the Hubbard model with dopant atoms in silicon.An atomic symmetry-controlled thermal switch.Characterizing Si:P quantum dot qubits with spin resonance techniquesControlled doping by self-assembled dendrimer-like macromolecules.Nanoparticle characterization based on STM and STS.Ab initio calculation of energy levels for phosphorus donors in silicon.Carbon nanotube transistors scaled to a 40-nanometer footprint.Comparing the Consistency of Atom Probe Tomography Measurements of Small-Scale Segregation and Clustering Between the LEAP 3000 and LEAP 5000 Instruments.Solid-state electrochemistry on the nanometer and atomic scales: the scanning probe microscopy approach.Conceptual Design of a Nano-Networking Device.Nanoscale phononic interconnects in THz frequencies.Reaction paths of phosphine dissociation on silicon (001).Coherent superpositions of three states for phosphorous donors in silicon prepared using THz radiation.Transport spectroscopy of coupled donors in silicon nano-transistors.Dynamics of a single-atom electron pump.Passivation and characterization of charge defects in ambipolar silicon quantum dotsImaging Atomic Scale Dynamics on III-V Nanowire Surfaces During Electrical Operation.A surface code quantum computer in siliconFan-out Estimation in Spin-based Quantum Computer Scale-up.Electric-field-assisted formation of an interfacial double-donor molecule in silicon nano-transistors.Atomically engineered electron spin lifetimes of 30 s in silicon.
P2860
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P2860
description
2012 nî lūn-bûn
@nan
2012 թուականի Փետրուարին հրատարակուած գիտական յօդուած
@hyw
2012 թվականի փետրվարին հրատարակված գիտական հոդված
@hy
2012年の論文
@ja
2012年論文
@yue
2012年論文
@zh-hant
2012年論文
@zh-hk
2012年論文
@zh-mo
2012年論文
@zh-tw
2012年论文
@wuu
name
A single-atom transistor.
@ast
A single-atom transistor.
@en
A single-atom transistor.
@nl
type
label
A single-atom transistor.
@ast
A single-atom transistor.
@en
A single-atom transistor.
@nl
prefLabel
A single-atom transistor.
@ast
A single-atom transistor.
@en
A single-atom transistor.
@nl
P2093
P2860
P50
P356
P1476
A single-atom transistor.
@en
P2093
Jill A Miwa
Martin Fuechsle
Oliver Warschkow
Suddhasatta Mahapatra
Sunhee Lee
P2860
P2888
P304
P356
10.1038/NNANO.2012.21
P407
P577
2012-02-19T00:00:00Z
P5875
P6179
1046047952