about
Advanced scanning probe lithographyInteracting ions in biophysics: real is not idealAb initio electronic properties of dual phosphorus monolayers in silicon.A single-atom transistor.Oscillatory threshold logic.Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in siliconNew avenues to an old material: controlled nanoscale doping of germanium.Atomistic modeling of metallic nanowires in silicon.Bottom-up assembly of metallic germanium.Diels-Alder attachment of a planar organic molecule to a dangling bond dimer on a hydrogenated semiconductor surface.Silicon epitaxy on H-terminated Si (100) surfaces at 250 °C.Tunneling spectroscopy of close-spaced dangling-bond pairs in Si(001):H.Quantum imaging of current flow in graphene.High-accuracy current generation in the nanoampere regime from a silicon single-trap electron pump.Nanoscale phononic interconnects in THz frequencies.Reaction paths of phosphine dissociation on silicon (001).Nondestructive imaging of atomically thin nanostructures buried in silicon.Gigahertz single-trap electron pumps in silicon.Crystallographic anisotropy of the resistivity size effect in single crystal tungsten nanowires.A surface code quantum computer in siliconFan-out Estimation in Spin-based Quantum Computer Scale-up.TiO2 nanowire electron transport pathways inside organic photovoltaics.Effect of strain on the electronic and optical properties of Ge-Si dome shaped nanocrystals.Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in silicon.On the effect of local barrier height in scanning tunneling microscopy: Measurement methods and control implications.Realization of a quantum Hamiltonian Boolean logic gate on the Si(001):H surface.STM patterned nanowire measurements using photolithographically defined implants in Si(100).Crystalline phosphorus fibers: controllable synthesis and visible-light-driven photocatalytic activity.The butterfly - a well-defined constant-current topography pattern on Si(001):H and Ge(001):H resulting from current-induced defect fluctuations.Spatial metrology of dopants in silicon with exact lattice site precision.Two-electron spin correlations in precision placed donors in silicon.High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single Donor D(-) Charge State.Limits to metallic conduction in atomic-scale quasi-one-dimensional silicon wires.Spin-lattice relaxation times of single donors and donor clusters in silicon.Spontaneous breaking of time-reversal symmetry in strongly interacting two-dimensional electron layers in silicon and germanium.Spin blockade and exchange in Coulomb-confined silicon double quantum dots.Spin readout and addressability of phosphorus-donor clusters in silicon.Quantum electronics. Probing Johnson noise and ballistic transport in normal metals with a single-spin qubit.A tight-binding study of single-atom transistors.Bottom-up superconducting and Josephson junction devices inside a group-IV semiconductor.
P2860
Q28245204-AFE78A5A-40AC-4A2C-BAEA-4DCF5713466FQ28290427-00B170BA-5DE7-4573-9774-632295CB2A91Q34152488-3946E587-025B-4984-80F1-D90BAD415FA3Q34161441-9986E000-AD79-417F-BE7A-BE17EEC6027AQ34485106-A9174CF8-3A6E-41B1-B99D-A33793447455Q34601637-4E9CD7E8-B92B-4EAC-89FD-799CC55189B2Q34605763-50904979-499E-4125-B361-300E856022AEQ34879715-C8A2DF3E-020A-417B-9B29-FE3255F4FD2FQ35740795-3D1B32CC-228E-4DEB-BA21-3ED65CD98D97Q36043506-F43E5A2B-292B-4BC9-9C5B-B6A3D8B6AA0CQ36072376-205B79A2-B52E-4763-94D6-374DB22AAD91Q36099963-04F77861-1E7C-46F4-80DD-DE3AF0C20075Q38683436-BFB5DE61-3988-4A4E-AFB5-4212400E4E4FQ38742464-B8782D89-40C3-4530-8D06-A26995ADD3B7Q39122536-14699474-61DB-479E-9616-20327394FC00Q40126827-4AD551DC-8079-4C3B-AB41-B79C721A6802Q41012856-90572173-E7EA-46AF-B2D3-90FD630BF69EQ42074873-D60D43A0-4C4C-42AB-A3E8-F19F0D60AFC9Q42585302-3EE08CC8-7FA9-4203-A62A-4C939CC86A67Q42623134-7671FFCB-FE63-4C09-94F2-1940826DDFA4Q42657302-6B22D1DC-9ED3-4DEF-9053-D8C6227AFF25Q45260639-54A80142-9DD2-41A6-8513-15CFC3B7BCA7Q46594968-AD418FDB-DF5C-44B1-942C-21173D0B3536Q47870480-CFD37A9B-E7CC-4886-90D6-DC318E5477D6Q48122603-F2E059C4-F7FA-4A2B-B442-487811E5BBD3Q48662456-9B3D08C6-D9BA-4D02-AFDF-7282D46205CCQ49501906-B53A975C-8257-4F5F-97E0-AB7DE2377E3FQ50458268-417DF565-29CD-4A9B-8CA2-CC7010846FF3Q50617376-0A949733-1ED6-4525-A081-E02814BAF737Q51301214-24AE5564-6F25-4C5B-91E2-85741C04D9CBQ51556976-3C5D6121-2B23-44F8-8D02-F87D441C85E4Q51575777-5EF4068E-C2BB-4DAE-82F2-F2F267D5EFECQ51582668-E38C66DE-6D62-4524-A9B6-D2D164228A9FQ51582678-9864DFAB-FDDA-4F89-BC0C-CB3790557BF9Q51587718-34ED52D0-C2D7-4879-B1AD-7C378C65F053Q51590239-D133A318-3E78-4165-A733-2C622448E85EQ51596209-47280F9F-CD93-433A-91B9-EDC587CF3DE1Q53237703-5FEEC02D-9A27-4786-AE86-EAF6F85704C0Q53421842-C59D75CC-0412-428F-ADAA-AF4A5B54FD39Q53511977-709EAF2E-AAA7-4F8B-99A1-464B343E9EBF
P2860
description
2012 nî lūn-bûn
@nan
2012 թուականի Յունուարին հրատարակուած գիտական յօդուած
@hyw
2012 թվականի հունվարին հրատարակված գիտական հոդված
@hy
2012年の論文
@ja
2012年論文
@yue
2012年論文
@zh-hant
2012年論文
@zh-hk
2012年論文
@zh-mo
2012年論文
@zh-tw
2012年论文
@wuu
name
Ohm's law survives to the atomic scale.
@ast
Ohm's law survives to the atomic scale.
@en
Ohm's law survives to the atomic scale.
@nl
type
label
Ohm's law survives to the atomic scale.
@ast
Ohm's law survives to the atomic scale.
@en
Ohm's law survives to the atomic scale.
@nl
prefLabel
Ohm's law survives to the atomic scale.
@ast
Ohm's law survives to the atomic scale.
@en
Ohm's law survives to the atomic scale.
@nl
P2093
P2860
P50
P356
P1433
P1476
Ohm's law survives to the atomic scale.
@en
P2093
D L Thompson
L C L Hollenberg
S Mahapatra
T C G Reusch
P2860
P356
10.1126/SCIENCE.1214319
P407
P577
2012-01-01T00:00:00Z