New avenues to an old material: controlled nanoscale doping of germanium.
about
Ultra-doped n-type germanium thin films for sensing in the mid-infrared.The butterfly - a well-defined constant-current topography pattern on Si(001):H and Ge(001):H resulting from current-induced defect fluctuations.Electronic structure of phosphorus and arsenicδ-doped germaniumOn the roles of graphene oxide doping for enhanced supercurrent in MgB2 based superconductors
P2860
New avenues to an old material: controlled nanoscale doping of germanium.
description
2013 nî lūn-bûn
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2013 թուականի Ապրիլին հրատարակուած գիտական յօդուած
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2013 թվականի ապրիլին հրատարակված գիտական հոդված
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2013年の論文
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2013年論文
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2013年論文
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2013年論文
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2013年論文
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2013年論文
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2013年论文
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name
New avenues to an old material: controlled nanoscale doping of germanium.
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New avenues to an old material: controlled nanoscale doping of germanium.
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New avenues to an old material: controlled nanoscale doping of germanium.
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type
label
New avenues to an old material: controlled nanoscale doping of germanium.
@ast
New avenues to an old material: controlled nanoscale doping of germanium.
@en
New avenues to an old material: controlled nanoscale doping of germanium.
@nl
prefLabel
New avenues to an old material: controlled nanoscale doping of germanium.
@ast
New avenues to an old material: controlled nanoscale doping of germanium.
@en
New avenues to an old material: controlled nanoscale doping of germanium.
@nl
P2860
P50
P356
P1433
P1476
New avenues to an old material: controlled nanoscale doping of germanium
@en
P2093
Wolfgang M Klesse
P2860
P304
P356
10.1039/C3NR34258A
P407
P577
2013-04-01T00:00:00Z