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Probing quantum coherence in single-atom electron spin resonance.All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics.Time-Resolved Imaging of Negative Differential Resistance on the Atomic Scale.Lithography for robust and editable atomic-scale silicon devices and memoriesAn orbitally derived single-atom magnetic memory
P2860
description
article científic
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article scientifique
@fr
articolo scientifico
@it
artigo científico
@pt
bilimsel makale
@tr
scientific article published on 26 October 2016
@en
vedecký článok
@sk
vetenskaplig artikel
@sv
videnskabelig artikel
@da
vědecký článek
@cs
name
Time-resolved single dopant charge dynamics in silicon.
@en
Time-resolved single dopant charge dynamics in silicon.
@nl
type
label
Time-resolved single dopant charge dynamics in silicon.
@en
Time-resolved single dopant charge dynamics in silicon.
@nl
prefLabel
Time-resolved single dopant charge dynamics in silicon.
@en
Time-resolved single dopant charge dynamics in silicon.
@nl
P2093
P2860
P356
P1476
Time-resolved single dopant charge dynamics in silicon.
@en
P2093
Jacob A J Burgess
Jason L Pitters
Marco Taucer
Robert A Wolkow
Roshan Achal
Sebastian Loth
P2860
P2888
P356
10.1038/NCOMMS13258
P407
P577
2016-10-26T00:00:00Z
P698
P818
1512.01101