Imaging the motion of electrons across semiconductor heterojunctions.
about
A Solution-Processed Ultrafast Optical Switch Based on a Nanostructured Epsilon-Near-Zero Medium.Photo-excited hot carrier dynamics in hydrogenated amorphous silicon imaged by 4D electron microscopy.Interfacial Electrochemistry in Liquids Probed with Photoemission Electron Microscopy.Long-range hot-carrier transport in hybrid perovskites visualized by ultrafast microscopy.Enhancing the magnetic anisotropy energy by tuning the contact areas of Ag and Ni at the Ag/Ni interface.k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures.Pulling apart photoexcited electrons by photoinducing an in-plane surface electric field
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P2860
Imaging the motion of electrons across semiconductor heterojunctions.
description
2016 nî lūn-bûn
@nan
2016年の論文
@ja
2016年論文
@yue
2016年論文
@zh-hant
2016年論文
@zh-hk
2016年論文
@zh-mo
2016年論文
@zh-tw
2016年论文
@wuu
2016年论文
@zh
2016年论文
@zh-cn
name
Imaging the motion of electrons across semiconductor heterojunctions.
@en
type
label
Imaging the motion of electrons across semiconductor heterojunctions.
@en
prefLabel
Imaging the motion of electrons across semiconductor heterojunctions.
@en
P2093
P2860
P50
P356
P1476
Imaging the motion of electrons across semiconductor heterojunctions.
@en
P2093
Andrew Winchester
Athanasios Margiolakis
M Bala Murali Krishna
Pulickel M Ajayan
Sidong Lei
Skylar Deckoff-Jones
P2860
P2888
P356
10.1038/NNANO.2016.183
P407
P577
2016-10-10T00:00:00Z
P6179
1051451027