Aligned silicon nanofins via the directed self-assembly of PS-b-P4VP block copolymer and metal oxide enhanced pattern transfer.
about
Strategies for Inorganic Incorporation using Neat Block Copolymer Thin Films for Etch Mask Function and Nanotechnological Application.Creating Active Device Materials for Nanoelectronics Using Block Copolymer Lithography.Morphological evolution of lamellar forming polystyrene-block-poly(4-vinylpyridine) copolymers under solvent annealing.Patterning at the 10 nanometer length scale using a strongly segregating block copolymer thin film and vapor phase infiltration of inorganic precursors.Development of Ordered, Porous (Sub-25 nm Dimensions) Surface Membrane Structures Using a Block Copolymer Approach.
P2860
Aligned silicon nanofins via the directed self-assembly of PS-b-P4VP block copolymer and metal oxide enhanced pattern transfer.
description
2015 nî lūn-bûn
@nan
2015年の論文
@ja
2015年論文
@yue
2015年論文
@zh-hant
2015年論文
@zh-hk
2015年論文
@zh-mo
2015年論文
@zh-tw
2015年论文
@wuu
2015年论文
@zh
2015年论文
@zh-cn
name
Aligned silicon nanofins via t ...... ide enhanced pattern transfer.
@en
Aligned silicon nanofins via t ...... ide enhanced pattern transfer.
@nl
type
label
Aligned silicon nanofins via t ...... ide enhanced pattern transfer.
@en
Aligned silicon nanofins via t ...... ide enhanced pattern transfer.
@nl
prefLabel
Aligned silicon nanofins via t ...... ide enhanced pattern transfer.
@en
Aligned silicon nanofins via t ...... ide enhanced pattern transfer.
@nl
P2093
P2860
P50
P356
P1433
P1476
Aligned silicon nanofins via t ...... xide enhanced pattern transfer
@en
P2093
Anushka Gangnaik
Nikolay Petkov
Roisin A Kelly
P2860
P304
P356
10.1039/C4NR07679F
P407
P577
2015-04-01T00:00:00Z