Next generation device grade silicon-germanium on insulator.
about
Laser recrystallization and inscription of compositional microstructures in crystalline SiGe-core fibresConfined in-fiber solidification and structural control of silicon and silicon-germanium microparticles.Towards a fully functional integrated photonic-electronic platform via a single SiGe growth stepComposition and temperature dependence of self-diffusion in Si1-x Ge x alloysHigh-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization.Localised Tuneable Composition Single Crystal Silicon-Germanium-on-Insulator for Low Cost Devices
P2860
Next generation device grade silicon-germanium on insulator.
description
2015 nî lūn-bûn
@nan
2015年の論文
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2015年論文
@yue
2015年論文
@zh-hant
2015年論文
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2015年論文
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2015年論文
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2015年论文
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2015年论文
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2015年论文
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name
Next generation device grade silicon-germanium on insulator.
@en
Next generation device grade silicon-germanium on insulator.
@nl
type
label
Next generation device grade silicon-germanium on insulator.
@en
Next generation device grade silicon-germanium on insulator.
@nl
prefLabel
Next generation device grade silicon-germanium on insulator.
@en
Next generation device grade silicon-germanium on insulator.
@nl
P2093
P2860
P356
P1433
P1476
Next generation device grade silicon-germanium on insulator
@en
P2093
Callum G Littlejohns
Frederic Y Gardes
Goran Z Mashanovich
Graham T Reed
John F Watts
P2860
P2888
P356
10.1038/SREP08288
P407
P577
2015-02-06T00:00:00Z