High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization.
about
High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization.
description
2017 nî lūn-bûn
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2017年の論文
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2017年学术文章
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2017年学术文章
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2017年学术文章
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2017年学术文章
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2017年学术文章
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2017年學術文章
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name
High-hole mobility polycrystal ...... r solid-phase crystallization.
@en
High-hole mobility polycrystal ...... r solid-phase crystallization.
@nl
type
label
High-hole mobility polycrystal ...... r solid-phase crystallization.
@en
High-hole mobility polycrystal ...... r solid-phase crystallization.
@nl
prefLabel
High-hole mobility polycrystal ...... r solid-phase crystallization.
@en
High-hole mobility polycrystal ...... r solid-phase crystallization.
@nl
P2093
P2860
P1433
P1476
High-hole mobility polycrystal ...... r solid-phase crystallization.
@en
P2093
Kaoru Toko
Kenta Moto
Ryota Yoshimine
P2860
P2888
P356
10.1038/S41598-017-17273-6
P407
P577
2017-12-05T00:00:00Z