Atomic layer doping of strained Ge-on-insulator thin films with high electron densities
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Atomic layer doping of strained Ge-on-insulator thin films with high electron densities
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im April 2013 veröffentlichter wissenschaftlicher Artikel
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wetenschappelijk artikel
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наукова стаття, опублікована у квітні 2013
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Atomic layer doping of strained Ge-on-insulator thin films with high electron densities
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Atomic layer doping of strained Ge-on-insulator thin films with high electron densities
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Atomic layer doping of strained Ge-on-insulator thin films with high electron densities
@en
Atomic layer doping of strained Ge-on-insulator thin films with high electron densities
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Atomic layer doping of strained Ge-on-insulator thin films with high electron densities
@en
Atomic layer doping of strained Ge-on-insulator thin films with high electron densities
@nl
P2093
P2860
P356
P1476
Atomic layer doping of strained Ge-on-insulator thin films with high electron densities
@en
P2093
G. Scappucci
J. M. Hartmann
M. Y. Simmons
W. M. Klesse
P2860
P304
P356
10.1063/1.4801981
P407
P577
2013-04-15T00:00:00Z