about
Polymorphism in the 1:1 Charge-Transfer Complex DBTTF-TCNQ and Its Effects on Optical and Electronic PropertiesSi Doped Hafnium Oxide-A “Fragile” Ferroelectric SystemReversible Plastic Deformation of Polymer Blends as a Means to Achieve Stretchable Organic TransistorsStress-Induced Domain Wall Motion in FeCo-Based Magnetic Microwires for Realization of Energy HarvestingEngineering of Amorphous Polymeric Insulators for Organic Field-Effect TransistorsSynergistic Photomodulation of Capacitive Coupling and Charge Separation Toward Functional Organic Field-Effect Transistors with High ResponsivityUnraveling Self-Doping Effects in Thermoelectric TiNiSn Half-Heusler Compounds by Combined Theory and High-Throughput ExperimentsThe Effects of Te2−and I−Substitutions on the Electronic Structures, Thermoelectric Performance, and Hardness in Melt-Quenched Highly Dense Cu2-xSeLow-Temperature-Processed SiO x One Diode-One Resistor Crossbar Array and Its Flexible Memory ApplicationP-Type Transparent Cu-Alloyed ZnS Deposited at Room TemperatureHigh-Performance Solution-Processed Amorphous-Oxide-Semiconductor TFTs with Organic Polymeric Gate DielectricsImproving Wearable Photodetector Textiles via Precise Energy Level Alignment and Plasmonic EffectTransparent Electrodes for Efficient OptoelectronicsA Graphene-Based Filament Transistor with Sub-10 mVdec−1 Subthreshold SwingDefining Switching Efficiency of Multilevel Resistive Memory with PdO as an ExampleEffect of Water, Oxygen, and Air Exposure on CH 3 NH 3 PbI 3– x Cl x Perovskite Surface Electronic PropertiesDual-Characteristic Transistors Based on Semiconducting Polymer Blendsp-Type Doping of Poly(3-hexylthiophene) with the Strong Lewis Acid Tris(pentafluorophenyl)boraneInkjet-Printed Resistive Switching Memory Based on Organic Dielectric Materials: From Single Elements to Array TechnologyStructure and Charge Transport Anisotropy of Polythieno[3,4-b ]-Thiophene-co -Benzodithiophene (PTB7) Oriented by High-Temperature RubbingIntegration of an Organic Resistive Memory with a Pressure-Sensitive Element on a Fully Flexible SubstratePressure-Triggered Memory: Integration of an Organic Resistive Memory with a Pressure-Sensitive Element on a Fully Flexible Substrate (Adv. Electron. Mater. 12/2015)Local Distortions in Nanostructured Ferroelectric Ceramics through Strain TuningSelf-Assembly of Functionalized Oligothiophene into Hygroscopic Fibers: Fabrication of Highly Sensitive and Fast Humidity Sensors(9,8) Single-Walled Carbon Nanotube Enrichment via Aqueous Two-Phase Separation and Their Thin-Film Transistor ApplicationsCellulosic Graphene Biocomposites for Versatile High-Performance Flexible Electronic ApplicationsFoldable Conductive Cellulose Fiber Networks Modified by Graphene Nanoplatelet-Bio-Based CompositesNegative Isotope Effect on Field-Effect Hole Transport in Fully Substituted 13 C-RubreneElectroluminescence from Organometallic Lead Halide Perovskite-Conjugated Polymer DiodesStrain-Controlled Responsiveness of Slave Half-Doped Manganite La0.5Sr0.5MnO3Layers Inserted in BaTiO3Ferroelectric Tunnel JunctionsSelecting Steady and Transient Photocurrent Response in BaTiO3FilmsCorrelation of Disorder and Charge Transport in a Range of Indacenodithiophene-Based Semiconducting PolymersAmbipolar Organic Phototransistors with p-Type/n-Type Conjugated Polymer Bulk Heterojunction Light-Sensing LayersThe Influence of Backbone Fluorination on the Dielectric Constant of Conjugated PolythiophenesOrganic/Inorganic Hybrid EIL for All-Solution-Processed OLEDsEffect of Annealing Ferroelectric HfO2 Thin Films: In Situ, High Temperature X-Ray DiffractionDomain Pinning: Comparison of Hafnia and PZT Based FerroelectricsElectrical Switching of Magnetization in the Artificial Multiferroic CoFeB/BaTiO3High-Mobility Transparent p-Type CuI Semiconducting Layers Fabricated on Flexible Plastic Sheets: Toward Flexible Transparent ElectronicsRoom Temperature Grown High-Quality Polymer-Like Carbon Gate Dielectric for Organic Thin-Film Transistors
P1433
Q57155054-C9AB6E07-5799-4C59-BF0C-36E787E0A072Q57424304-8AF77535-D6F5-4B80-BD49-251709E0AB8DQ57428926-AE962F59-5363-44CE-8EE1-1058F156DD06Q59702106-37BB2D2B-27C6-463F-A5EF-8C516D04C4F2Q59711672-D3F3ED85-3B98-403B-BE53-41FB14A835A5Q59711690-7C7C5D39-8766-4F94-8E9D-4BEDFAF730D6Q59720544-435000EF-068A-431D-8285-CDDCE3B5E68FQ59745700-44CB2E81-4294-4331-BCFB-336AD7D087A1Q59768240-7FACA1B3-C284-4DB4-90C0-BBAE18029C83Q59770275-AA6CC838-F4EE-40A5-AE26-23D83DB3F7F7Q59819212-DC0FD4FF-EAA9-4C34-914F-220BFC3C0AB2Q59870893-26044950-2D23-4473-9B4F-4C53E765FE19Q59943178-7A2099D1-2F42-4D6E-B1C8-88DF13E34AD4Q59978193-0E84C18A-09EB-491A-816C-96A90ABE06F5Q60064177-4FFCB019-AEFB-4F41-9A19-5EF2BF5637C4Q60149247-2A2666D8-8FFA-48B6-9A37-1AFB000E8B5BQ60149275-0EC6F5BD-B439-40F1-8F23-F17B7AC8616DQ60150770-5ECCA046-83C4-4BE3-A362-C7611EDD1038Q60150908-4EE9B0CC-DEEE-47B4-B743-41EEEC6AA83CQ60156673-8C768C1F-AD3E-4B93-B32C-D02F901609B7Q60156818-C1AB6AFA-FABB-41F7-BAA1-D7DC7A36B59FQ60156820-48190955-101B-4DB4-8254-F75CA0A11A23Q60157124-CE62C87F-6B1A-469D-AADA-BBF55395826AQ60159658-3B36A89A-B521-439E-8312-FD4A3E05F758Q60159793-37811C58-1A62-493F-8CE3-56E24AFA4D1AQ60183142-A627D2E8-6BD6-48BF-BD5E-842B914B52ACQ60183144-661A80E8-DBF5-4DB5-88CE-90CFB4171260Q60209056-F511D1C3-AF5C-47FF-9440-6A7D7F5D924AQ60239647-0F2BD7C0-57AD-406B-931D-B40D280A0E05Q60287738-C05A72FC-8963-4368-9382-559EC685D0D4Q60287743-8C94BEDC-1890-4A3D-9C3F-14B45A4308BCQ60302776-9FC4B973-527A-4CEA-A470-E5BA53338CDEQ60302805-B015D8F2-1F75-4941-97FC-C17F76FFF88BQ60433481-8448B538-FAE3-4BCC-9E33-71C127F7AD93Q60465834-323ED1E6-2B48-479D-8096-ABDEABE09591Q60488005-F8DE6A12-C39B-48D2-A268-804D9550C8B6Q60488012-969AE78B-0F12-4E49-B2A6-6C9123FEB871Q60489313-52CCA345-8BFA-4886-A0EF-C197DE1F79D0Q60493554-E4A5986A-729D-469D-B64E-627BB67B18CDQ60511983-3535ADA8-E942-4306-AEB3-8CBCD5C9F72B
P1433
description
czasopismo naukowe
@pl
journal
@en
revista científica
@es
wetenschappelijk tijdschrift
@nl
wissenschaftliche Fachzeitschrift
@de
name
Advanced Electronic Materials
@ast
Advanced Electronic Materials
@en
Advanced Electronic Materials
@es
Advanced Electronic Materials
@nl
type
label
Advanced Electronic Materials
@ast
Advanced Electronic Materials
@en
Advanced Electronic Materials
@es
Advanced Electronic Materials
@nl
prefLabel
Advanced Electronic Materials
@ast
Advanced Electronic Materials
@en
Advanced Electronic Materials
@es
Advanced Electronic Materials
@nl
P356
P1055
P1156
21100463869
P236
P356
10.1002/(ISSN)2199-160X