Indium aluminium nitride (InAlN) is a direct bandgap semiconductor material used in the manufacture of electronic and photonic devices. It is part of the III-V group of semiconductors, being an alloy of indium nitride and aluminium nitride, and is closely related to the more widely used gallium nitride. It is of special interest in applications requiring good stability and reliability, owing to its large direct bandgap and ability to maintain operation at temperatures of up to 1000 °C., making it of particular interest to areas such as the space industry. InAlN high-electron-mobility transistors (HEMTs) are attractive candidates for such applications owing to the ability of InAlN to lattice-match to gallium nitride, eliminating a reported failure route in the closely related aluminium gall