LDMOS
LDMOS (laterally diffused metal oxide semiconductor) transistors are used in microwave/RF power amplifiers. These transistors are often fabricated on p/p+ silicon epitaxial layers. The fabrication of LDMOS devices mostly involves various ion-implantation and subsequent annealing cycles. As an example, The drift region of this power MOSFET is fabricated using up to three ion implantation sequences in order to achieve the appropriate doping profile needed to withstand high electric fields.
primaryTopic
LDMOS
LDMOS (laterally diffused metal oxide semiconductor) transistors are used in microwave/RF power amplifiers. These transistors are often fabricated on p/p+ silicon epitaxial layers. The fabrication of LDMOS devices mostly involves various ion-implantation and subsequent annealing cycles. As an example, The drift region of this power MOSFET is fabricated using up to three ion implantation sequences in order to achieve the appropriate doping profile needed to withstand high electric fields.
has abstract
LDMOS (laterally diffused meta ...... pologies or envelope tracking.
@en
横向扩散金属氧化物半导体(英语:Laterally Diff ...... IS)、英飞凌、RFMD、飞思卡尔(Freescale)等。
@zh
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LDMOS (laterally diffused meta ...... ithstand high electric fields.
@en
横向扩散金属氧化物半导体(英语:Laterally Diff ...... IS)、英飞凌、RFMD、飞思卡尔(Freescale)等。
@zh
label
LDMOS
@en
横向扩散金属氧化物半导体
@zh