Atomic layer deposition
Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors (also called "reactants"). These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. A thin film is slowly deposited through repeated exposure to separate precursors. ALD is a key process in fabricating semiconductor devices, and part of the set of tools for synthesising nanomaterials.
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90 nm processALDASM InternationalAluminium oxideAmorphous siliconApplied MaterialsAtomic Layer DepositionAtomic layer epitaxyAtomic layer etchingBismuth ferriteBlack siliconBorateCMOSCarbon nanotube supported catalystCharles MusgraveChemical vapor depositionClaire J. CarmaltCombustion chemical vapor depositionDeposition (chemistry)Filippo BertoFinluxFixation (alchemy)Glossary of nanotechnologyGradient multilayer nanofilmGurtej SandhuHafnium(IV) oxideHafnium(IV) silicateHafnium tetrachlorideHigh-electron-mobility transistorHigh-κ dielectricHistory of nanotechnologyIntegrated passive devicesIon layer gas reactionIsobutylgermaneIvan Georgiev PetrovLALDLam ResearchLanthanum aluminate-strontium titanate interfaceLanthanum oxideLayer by layer
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Atomic layer deposition
Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors (also called "reactants"). These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. A thin film is slowly deposited through repeated exposure to separate precursors. ALD is a key process in fabricating semiconductor devices, and part of the set of tools for synthesising nanomaterials.
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Atomic layer deposition (ALD) ...... or synthesising nanomaterials.
@en
Die Atomlagenabscheidung (engl ...... Moleküllagenabscheidung“).
@de
L’Atomic Layer Deposition (ALD ...... e de gaz précurseurs adsorbés.
@fr
Атомно-слоевое осаждение (АСО) ...... происходит рост тонкой плёнки.
@ru
Атомно-шарове осадження (АШО, ...... дбувається ріст тонкої плівки.
@uk
原子层沉积(英文:Atomic layer depositi ...... 半导体设备装配方法,也可以成为一些纳米材料合成方法中的一环。
@zh
原子層堆積、または原子層堆積法(ALD:Atomic lay ...... にフィンランドのトゥオモ・スントラ博士によって実用化された。
@ja
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Atomic layer deposition (ALD) ...... or synthesising nanomaterials.
@en
Die Atomlagenabscheidung (engl ...... uktur. Für einkristalline (epi
@de
L’Atomic Layer Deposition (ALD ...... e de gaz précurseurs adsorbés.
@fr
Атомно-слоевое осаждение (АСО) ...... происходит рост тонкой плёнки.
@ru
Атомно-шарове осадження (АШО, ...... дбувається ріст тонкої плівки.
@uk
原子层沉积(英文:Atomic layer depositi ...... 半导体设备装配方法,也可以成为一些纳米材料合成方法中的一环。
@zh
原子層堆積、または原子層堆積法(ALD:Atomic lay ...... にフィンランドのトゥオモ・スントラ博士によって実用化された。
@ja
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Atomic Layer Deposition
@fr
Atomic layer deposition
@en
Atomlagenabscheidung
@de
Атомно-слоевое осаждение
@ru
Атомно-шарове осадження
@uk
原子层沉积
@zh
原子層堆積
@ja