Indium arsenide antimonide phosphide

Indium arsenide antimonide phosphide (InAsSbP) is a semiconductor material. InAsSbP has been widely used as blocking layers for semiconductor laser structures, as well as for the mid-infrared light-emitting diodes, photodetectors and thermophotovoltaic cells.

Indium arsenide antimonide phosphide

Indium arsenide antimonide phosphide (InAsSbP) is a semiconductor material. InAsSbP has been widely used as blocking layers for semiconductor laser structures, as well as for the mid-infrared light-emitting diodes, photodetectors and thermophotovoltaic cells.