Electro-absorption modulator

Electro-absorption modulator (EAM) is a semiconductor device which can be used for modulating the intensity of a laser beam via an electric voltage. Its principle of operation is based on the Franz-Keldysh effect, i.e., a change in the absorption spectrum caused by an applied electric field, which changes the bandgap energy (thus the photon energy of an absorption edge) but usually does not involve the excitation of carriers by the electric field.

Electro-absorption modulator

Electro-absorption modulator (EAM) is a semiconductor device which can be used for modulating the intensity of a laser beam via an electric voltage. Its principle of operation is based on the Franz-Keldysh effect, i.e., a change in the absorption spectrum caused by an applied electric field, which changes the bandgap energy (thus the photon energy of an absorption edge) but usually does not involve the excitation of carriers by the electric field.