Capacitance–voltage profiling
Capacitance–voltage profiling (or C–V profiling, sometimes CV profiling) is a technique for characterizing semiconductor materials and devices. The applied voltage is varied, and the capacitance is measured and plotted as a function of voltage. The technique uses a metal–semiconductor junction (Schottky barrier) or a p–n junction or a MOSFET to create a depletion region, a region which is empty of conducting electrons and holes, but may contain ionized donors and electrically active defects or traps. The depletion region with its ionized charges inside behaves like a capacitor. By varying the voltage applied to the junction it is possible to vary the depletion width. The dependence of the depletion width upon the applied voltage provides information on the semiconductor's internal characte
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C-V profilingC-V testingCVCV profilingCapacitance-Voltage TestingCapacitance-voltage profilingCapacitance voltage profilingCapacitance voltage testingDeep-level transient spectroscopyDepletion regionDrive-level capacitance profilingECVIndex of physics articles (C)Mott–Schottky plotOutline of electronicsP–n junctionQuantum capacitanceSchottky barrierSemiconductor characterization techniques
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Capacitance–voltage profiling
Capacitance–voltage profiling (or C–V profiling, sometimes CV profiling) is a technique for characterizing semiconductor materials and devices. The applied voltage is varied, and the capacitance is measured and plotted as a function of voltage. The technique uses a metal–semiconductor junction (Schottky barrier) or a p–n junction or a MOSFET to create a depletion region, a region which is empty of conducting electrons and holes, but may contain ionized donors and electrically active defects or traps. The depletion region with its ionized charges inside behaves like a capacitor. By varying the voltage applied to the junction it is possible to vary the depletion width. The dependence of the depletion width upon the applied voltage provides information on the semiconductor's internal characte
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C-V特性曲线(电容电压特性曲线)是用来测量半导体材料和器件 ...... 子化的施主或晶体缺陷)。当电压改变时,耗尽层深浅也发生变化。
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Capacitance–voltage profiling ...... arge-signal transient voltage.
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C-V特性曲线(电容电压特性曲线)是用来测量半导体材料和器件 ...... 子化的施主或晶体缺陷)。当电压改变时,耗尽层深浅也发生变化。
@zh
Capacitance–voltage profiling ...... iconductor's internal characte
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C-V特性曲线
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Capacitance–voltage profiling
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