Deal–Grove model
The Deal–Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to predict and interpret thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965 by Bruce Deal and Andrew Grove of Fairchild Semiconductor, building on Mohamed M. Atalla's work on silicon surface passivation by thermal oxidation at Bell Labs in the late 1950s. This served as a step in the development of CMOS devices and the fabrication of integrated circuits.
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Deal–Grove model
The Deal–Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to predict and interpret thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965 by Bruce Deal and Andrew Grove of Fairchild Semiconductor, building on Mohamed M. Atalla's work on silicon surface passivation by thermal oxidation at Bell Labs in the late 1950s. This served as a step in the development of CMOS devices and the fabrication of integrated circuits.
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The Deal–Grove model mathemati ...... cation of integrated circuits.
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Модель Дила — Гроува — математ ...... Эндрю Гроувом (Andrew Grove).
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The Deal–Grove model mathemati ...... cation of integrated circuits.
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Модель Дила — Гроува — математ ...... Эндрю Гроувом (Andrew Grove).
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Deal–Grove model
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Модель Дила — Гроува
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