Shockley diode equation

The Shockley diode equation or the diode law, named after transistor co-inventor William Shockley of Bell Telephone Laboratories, gives the I–V (current-voltage) characteristic of an idealized diode in either forward or reverse bias (applied voltage): where I is the diode current,IS is the reverse bias saturation current (or scale current),VD is the voltage across the diode,VT is the thermal voltage kT/q (Boltzmann constant times temperature divided by electron charge), andn is the ideality factor, also known as the quality factor or sometimes emission coefficient.

Shockley diode equation

The Shockley diode equation or the diode law, named after transistor co-inventor William Shockley of Bell Telephone Laboratories, gives the I–V (current-voltage) characteristic of an idealized diode in either forward or reverse bias (applied voltage): where I is the diode current,IS is the reverse bias saturation current (or scale current),VD is the voltage across the diode,VT is the thermal voltage kT/q (Boltzmann constant times temperature divided by electron charge), andn is the ideality factor, also known as the quality factor or sometimes emission coefficient.