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S11671-017-2266-7
S11671-017-2266-7
http://dx.doi.org/10.1186/S11671-017-2266-7
Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy.
P356
Q41417654-20FE71F0-6546-418C-A6F5-6007BCF67A00
P356
S11671-017-2266-7
http://dx.doi.org/10.1186/S11671-017-2266-7