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Intrinsic Defects, Fluctuations of the Local Shape, and the Photo-Oxidation of Black Phosphorus.Scalable fabrication of a hybrid field-effect and acousto-electric device by direct growth of monolayer MoS2/LiNbO3Elasticity of MoS2 Sheets by Mechanical Deformation Observed by in Situ Electron MicroscopySpin-Orbit Coupling, Quantum Dots, and Qubits in Monolayer Transition Metal DichalcogenidesThe thermal and electrical properties of the promising semiconductor MXene Hf2CO2.Optical Spectrum of MoS 2 : Many-Body Effects and Diversity of Exciton StatesTunable electronic and magnetic properties of two-dimensional materials and their one-dimensional derivatives.Visualizing nanoscale excitonic relaxation properties of disordered edges and grain boundaries in monolayer molybdenum disulfideMoS2 Nanosheet-Pd Nanoparticle Composite for Highly Sensitive Room Temperature Detection of HydrogenSynthesis of MoS2 and MoO2 for their applications in H2 generation and lithium ion batteries: a reviewNanostructure sensitization of transition metal oxides for visible-light photocatalysisInter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2Origins of Ripples in CVD-Grown Few-layered MoS2 Structures under Applied Strain at Atomic ScalesImproving the Photoelectric Characteristics of MoS2 Thin Films by Doping Rare Earth Element ErbiumChemical Vapor Deposition of High-Quality Large-Sized MoS2 Crystals on Silicon Dioxide SubstratesGas Protection of Two-Dimensional Nanomaterials from High-Energy ImpactsChemical doping of MoS2 multilayer by p-toluene sulfonic acidLarge area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructuresElectronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole ContactsScalable Production of Molybdenum Disulfide Based BiosensorsCampanile Near-Field Probes Fabricated by Nanoimprint Lithography on the Facet of an Optical Fiber.Size-tunable Lateral Confinement in Monolayer Semiconductors.Intervalley scattering by acoustic phonons in two-dimensional MoS2 revealed by double-resonance Raman spectroscopyThermal Conductance of the 2D MoS2/h-BN and graphene/h-BN Interfaces.Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides.Simulation Evidence of Hexagonal-to-Tetragonal ZnSe Structure Transition: A Monolayer Material with a Wide-Range Tunable Direct BandgapChromatic Mechanical Response in 2-D Layered Transition Metal Dichalcogenide (TMDs) based Nanocomposites.Unusual lattice vibration characteristics in whiskers of the pseudo-one-dimensional titanium trisulfide TiS3.First step to investigate nature of electronic states and transport in flower-like MoS2: Combining experimental studies with computational calculations.Performance of arsenene and antimonene double-gate MOSFETs from first principles.Dual-mode operation of 2D material-base hot electron transistors.The stability of aluminium oxide monolayer and its interface with two-dimensional materialsImproving resolution in quantum subnanometre-gap tip-enhanced Raman nanoimagingOptical polarization and intervalley scattering in single layers of MoS2 and MoSe2.Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth.Coherent Nonlinear Optical Response Spatial Self-Phase Modulation in MoSe2 Nano-SheetsUnusual dimensionality effects and surface charge density in 2D Mg(OH)2.Synthesis of Large-Area WS2 monolayers with Exceptional Photoluminescence.Raman fingerprint for semi-metal WTe2 evolving from bulk to monolayer.A Revisit to High Thermoelectric Performance of Single-layer MoS2.
P2860
Q27300751-95B28683-87DC-4A28-965B-6323643A532CQ27320951-CA63AFEE-B5A1-437B-BCBE-78774E1436C2Q27335605-B9D37741-3D92-400F-A353-E6FDD2B73D03Q27336367-274ECFE1-017D-4DC8-9137-3FD6494E30F2Q27339883-5207A5FB-B630-4EB4-9548-C2B5E723B760Q27450027-1BEC7CC3-F828-49DB-8ABF-51493D12D161Q28070228-D624F362-E3D8-4D46-8AE4-C319DB7FADB9Q28266212-1CD24E66-1ACE-4B28-B635-F78E6266B7ECQ28595533-77678D12-E93A-43A2-BB5B-ADE7CD88144BQ28596687-CE3A5567-7533-42B8-AF15-D54F8415A1B0Q28656450-83EA60FD-4A01-448F-9812-359299FBBDD5Q28817393-863DD676-848D-4F18-909B-287CF6BA1F2FQ28818807-4EA2EA5A-ACA5-488A-95FF-C0A952A54FECQ28820775-01C258B1-1BDF-4A95-920F-DB5E1035F2CFQ28821544-04AC4D12-4ED7-465D-9954-6782993D754BQ28821723-52E43451-A3CD-475E-A8DB-75451AF8E7E7Q28821896-94771EDE-6721-4DD6-A5C8-8BEA69C0C725Q28828924-A3E6FC38-710C-4C7C-8060-8530D01E17D6Q28829109-E59438A6-512F-4DAA-8EDE-31517E8748C6Q28829730-8C8DAF73-98CB-48DE-957F-508E9B60AA73Q29994713-324CDBE3-439C-4ADC-A116-3574D052977EQ30354343-D16E59BA-4082-4B64-904E-D35AEEE7244BQ30360711-0873A2DE-F7A4-47E5-BDA1-04E8861296ADQ30361585-873B6F6C-2698-4F90-81D6-171164E8C09FQ30369613-708A8DA8-DE34-4B40-8242-3BBB5194E5FBQ30372094-5C82F2D1-E987-4C83-9EF3-A7156591EC6AQ30372194-910C1F1B-F1BC-451B-8A99-D6EB2E5D5B7DQ30372940-B61245C9-79E8-4927-9AF2-1B5D2B1BCE09Q30374331-50591547-4068-4DBC-8210-BC93DB2899EAQ30374496-CC4FC40B-FA1A-4FFF-9C9D-BF5D390C82E3Q30374823-FCAABD27-4AC2-45B5-B578-19F5C9FC329DQ30379581-B655D7F0-2745-44FC-9E24-F2C4448A7154Q30381921-36F97EA0-85E5-4EBE-BBF2-1FDD9AB3882CQ30384989-C8DD2450-C2BD-42DB-B549-E3F40F36CA9DQ30386815-6E0B9BB5-0389-4F16-9892-77CDF74DFE22Q30389359-B7E8E1BE-1E65-4EC9-B4CC-DF1AAAFAEED7Q30391441-D27B3C30-7E5F-41E5-AFCD-07FC5C940811Q30392840-795B867E-CEA8-471B-8874-376883510C49Q30392933-FF82EA5B-654A-45B7-8AA9-2B62B4BA0221Q30395672-542A9FAE-D7E9-4FFF-A844-3076A49CC4C0
P2860
description
2010 nî lūn-bûn
@nan
2010 թուականի Սեպտեմբերին հրատարակուած գիտական յօդուած
@hyw
2010 թվականի սեպտեմբերին հրատարակված գիտական հոդված
@hy
2010年の論文
@ja
2010年論文
@yue
2010年論文
@zh-hant
2010年論文
@zh-hk
2010年論文
@zh-mo
2010年論文
@zh-tw
2010年论文
@wuu
name
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
@ast
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
@en
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
@nl
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
@en-gb
type
label
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
@ast
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
@en
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
@nl
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
@en-gb
altLabel
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
@en
Atomically thin MoS₂: a new direct-gap semiconductor
@en
prefLabel
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
@ast
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
@en
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
@nl
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
@en-gb
P2093
P3181
P1476
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
@en
Atomically thin MoS₂: a new direct-gap semiconductor
@en
P2093
Changgu Lee
Kin Fai Mak
Tony F. Heinz
P304
P3181
P356
10.1103/PHYSREVLETT.105.136805
P407
P577
2010-09-01T00:00:00Z
2010-09-24T00:00:00Z