Growth and applications of GeSn-related group-IV semiconductor materials - Wikidata - awgldk - TriplyDB

Growth and applications of GeSn-related group-IV semiconductor materials

Growth and applications of GeSn-related group-IV semiconductor materials

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Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform Improving carrier mobility of polycrystalline Ge by Sn doping

P2860

Q36148768-EDB62C92-3791-424C-BCCB-79CAC44DCB42 Q57031936-0226CED8-073E-4F07-BA4E-BD0DF5365BFC

P2860

Growth and applications of GeSn-related group-IV semiconductor materials

http://www.wikidata.org/entity/Q28084937

description

2015 nî lūn-bûn

@nan

2015 թուականի Յուլիսին հրատարակուած գիտական յօդուած

@hyw

2015 թվականի հուլիսին հրատարակված գիտական հոդված

@hy

2015年の論文

@ja

2015年論文

@yue

2015年論文

@zh-hant

2015年論文

@zh-hk

2015年論文

@zh-mo

2015年論文

@zh-tw

2015年论文

@wuu

name

Growth and applications of GeSn-related group-IV semiconductor materials

@ast

Growth and applications of GeSn-related group-IV semiconductor materials

@en

Growth and applications of GeSn-related group-IV semiconductor materials

@nl

type

label

Growth and applications of GeSn-related group-IV semiconductor materials

@ast

Growth and applications of GeSn-related group-IV semiconductor materials

@en

Growth and applications of GeSn-related group-IV semiconductor materials

@nl

prefLabel

Growth and applications of GeSn-related group-IV semiconductor materials

@ast

Growth and applications of GeSn-related group-IV semiconductor materials

@en

Growth and applications of GeSn-related group-IV semiconductor materials

@nl

P1433

Q28084937-32F42203-9587-4EE6-AF8B-66EE1D2106E7

P1476

Q28084937-3C4BAEA1-F41D-4140-A107-0C47E1DD57BE

P2093

Q28084937-0893C091-2854-4B8C-914F-E1C83714F9F1

Q28084937-70498C18-A88F-4EF4-A663-8599F44F7CDD

Q28084937-8B90F512-5368-4F37-9939-5C745FA1D1F6

Q28084937-F49E8930-2199-42F3-AB79-E5563E236592

P2860

Q28084937-0714BE66-8929-4C3B-9C94-68926EF86292

Q28084937-2FA0D9A1-081D-439D-B559-2DE9AA98FED5

Q28084937-4338F2DD-D0EC-47BF-AE1D-E206AEC1258E

Q28084937-4F3AF739-F2F0-46FB-BB01-D5F7CB6BCC67

Q28084937-5C074726-B92F-442C-980D-682BBFDDA906

Q28084937-6E3721DC-66D9-487B-BE05-36DE3AB77434

Q28084937-8C3355A8-A451-4838-B2AB-885A31238002

Q28084937-9A676C92-C7C5-4CF7-B991-4ED1A823FAC8

Q28084937-B8B4B7F0-971C-4238-B9DF-DEB3B08E9A7E

Q28084937-D5B47BE8-041A-436D-A0B9-E2F4C5E3004D

P304

Q28084937-0AEFD2D3-F1E7-42CD-A962-1A4C041EBCD3

P31

Q28084937-D2BBF364-E957-4131-AA15-12E0E9F8122F

P356

Q28084937-8F88AAD9-9F9A-4197-8354-0D8542EE28A9

P407

Q28084937-B11F8095-9695-45FD-AEE0-8DDDE0243A62

P433

Q28084937-5C734698-E3E2-49EC-9247-0C820B7EA719

P478

Q28084937-A45E1108-7C15-42B9-B889-BEC205237C98

P50

Q28084937-2F74E704-2118-4430-9E3B-78A7E9D5235F

Q28084937-33B609D4-0C2B-4FB8-A7FE-729B48ABB06B

P577

Q28084937-232BE50E-8788-474A-A7BF-EC62F08C64B3

P5875

Q28084937-668FEF7B-8F30-460C-A72C-8C19E0057EE1

P698

Q28084937-2C2C21B0-E3C6-4F6A-A0E4-80C79C9F6B61

P921

Q28084937-32F35D82-4F42-44EB-8794-CE3478608E5F

P932

Q28084937-3756DAB8-E05B-4A00-A099-DAAF43D861BE

P356

P1433

Science and Technology of Advanced Materials

P1476

Growth and applications of GeSn-related group-IV semiconductor materials

@en

P2093

Mitsuo Sakashita

http://www.w3.org/2001/XMLSchema#string

Noriyuki Taoka

http://www.w3.org/2001/XMLSchema#string

Shigeaki Zaima

http://www.w3.org/2001/XMLSchema#string

Wakana Takeuchi

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P2860

Synthesis of silicon-based infrared semiconductors in the Ge-Sn system using molecular chemistry methods.

Molecular-based synthetic approach to new group IV materials for high-efficiency, low-cost solar cells and Si-based optoelectronics.

Theory for n-type doped, tensile-strained Ge-Si(x)Ge(y)Sn1-x-y quantum-well lasers at telecom wavelength.

GeSn/Ge heterostructure short-wave infrared photodetectors on silicon.

GeSn p-i-n photodetector for all telecommunication bands detection.

Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface

In situ x-ray diffraction study of metal induced crystallization of amorphous germanium

Thin film reaction of transition metals with germanium

Identification of stable and metastable forms of centers in germanium

Radiation-Induced Defect Reactions in Tin-Doped Ge Crystals

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043502

http://www.w3.org/2001/XMLSchema#string

P31

scholarly article

P356

10.1088/1468-6996/16/4/043502

http://www.w3.org/2001/XMLSchema#string

P407

P433

4

http://www.w3.org/2001/XMLSchema#string

P478

16

http://www.w3.org/2001/XMLSchema#string

P50

Osamu Nakatsuka

Masashi Kurosawa

P577

2015-07-28T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P5875

281059194

http://www.w3.org/2001/XMLSchema#string

P698

27877818

http://www.w3.org/2001/XMLSchema#string

P921

P932

5090177

http://www.w3.org/2001/XMLSchema#string