Electronic and chemical structure of the H2O/GaN(0001) interface under ambient conditions
about
Co-adsorption of water and oxygen on GaN: Effects of charge transfer and formation of electron depletion layer.Evolution of CH3NO2/Si interfacial chemistry under reaction conditions: a combined experimental and theoretical study.Atomic-Scale Origin of Long-Term Stability and High Performance of p-GaN Nanowire Arrays for Photocatalytic Overall Pure Water Splitting.
P2860
Electronic and chemical structure of the H2O/GaN(0001) interface under ambient conditions
description
2016 nî lūn-bûn
@nan
2016 թուականի Ապրիլին հրատարակուած գիտական յօդուած
@hyw
2016 թվականի ապրիլին հրատարակված գիտական հոդված
@hy
2016年の論文
@ja
2016年論文
@yue
2016年論文
@zh-hant
2016年論文
@zh-hk
2016年論文
@zh-mo
2016年論文
@zh-tw
2016年论文
@wuu
name
Electronic and chemical structure of the H2O/GaN(0001) interface under ambient conditions
@ast
Electronic and chemical structure of the H2O/GaN(0001) interface under ambient conditions
@en
type
label
Electronic and chemical structure of the H2O/GaN(0001) interface under ambient conditions
@ast
Electronic and chemical structure of the H2O/GaN(0001) interface under ambient conditions
@en
prefLabel
Electronic and chemical structure of the H2O/GaN(0001) interface under ambient conditions
@ast
Electronic and chemical structure of the H2O/GaN(0001) interface under ambient conditions
@en
P2860
P3181
P356
P1433
P1476
Electronic and chemical structure of the H2O/GaN(0001) interface under ambient conditions
@en
P2093
Sylwia Ptasinska
Xueqiang Zhang
P2860
P2888
P3181
P356
10.1038/SREP24848
P407
P577
2016-04-25T00:00:00Z
P5875
P6179
1039592219