Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode
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Efficient Carrier Injection, Transport, Relaxation, and Recombination Associated with a Stronger Carrier Localization and a Low Polarization Effect of Nonpolar m-plane InGaN/GaN Light-Emitting Diodes.III-nitride core-shell nanorod array on quartz substrates.Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes.
P2860
Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode
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2016 nî lūn-bûn
@nan
2016 թուականի Դեկտեմբերին հրատարակուած գիտական յօդուած
@hyw
2016 թվականի դեկտեմբերին հրատարակված գիտական հոդված
@hy
2016年の論文
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2016年論文
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2016年論文
@zh-hant
2016年論文
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2016年論文
@zh-mo
2016年論文
@zh-tw
2016年论文
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name
Emission Characteristics of In ...... d in a 3D Light-Emitting Diode
@ast
Emission Characteristics of In ...... d in a 3D Light-Emitting Diode
@en
type
label
Emission Characteristics of In ...... d in a 3D Light-Emitting Diode
@ast
Emission Characteristics of In ...... d in a 3D Light-Emitting Diode
@en
prefLabel
Emission Characteristics of In ...... d in a 3D Light-Emitting Diode
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Emission Characteristics of In ...... d in a 3D Light-Emitting Diode
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P2093
P2860
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P1476
Emission Characteristics of In ...... d in a 3D Light-Emitting Diode
@en
P2093
Byung Oh Jung
Jeong Yong Lee
Sang Yun Kim
Seunga Lee
Si-Young Bae
Yoshio Honda
P2860
P2888
P3181
P356
10.1186/S11671-016-1441-6
P407
P577
2016-12-01T00:00:00Z
P6179
1002409610