Continuous wave operation of a mid-infrared semiconductor laser at room temperature.
about
Photoacoustic techniques for trace gas sensing based on semiconductor laser sources.Quantum cascade laser absorption spectroscopy as a plasma diagnostic tool: an overview.Phonon-enhanced light matter interaction at the nanometre scale.Quantum cascade surface-emitting photonic crystal laser.Improved performance of quantum cascade lasers through a scalable, manufacturable epitaxial-side-down mounting process.Continuous glucose monitoring by means of fiber-based, mid-infrared laser spectroscopy.Mid-infrared spectroscopy for gases and liquids based on quantum cascade technologies.Broadband spectroscopy with external cavity quantum cascade lasers beyond conventional absorption measurements.Dual-comb spectroscopy based on quantum-cascade-laser frequency combs.Infrared spectroscopy of the ν2 band of the water monomer and small water clusters (H2O)n=2,3,4 in helium droplets.Toward continuous-wave operation of organic semiconductor lasers.Watt-Level Continuous-Wave Emission from a Bifunctional Quantum Cascade Laser/Detector.Infrared spectroscopic imaging: the next generationPhotosensitive graphene transistors.Quantum cascade lasers (QCLs) in biomedical spectroscopy.Continuous-wave biexciton lasing at room temperature using solution-processed quantum wells.Characterization of the superlattice region of a quantum cascade laser by secondary ion mass spectrometry.Applied physics: bridge for the terahertz gap.High-average-power, high-duty-cycle (λ∼6 μm) quantum cascade lasersPopulation inversion by resonant magnetic confinement in terahertz quantum-cascade lasersTuning of the intersubband emission below the longitudinal optical phonon energy in GaAs/AlGaAs quantum cascade emittersMechanisms of dynamic range limitations in GaAs∕AlGaAs quantum-cascade lasers: Influence of injector dopingAnalysis of key parameters affecting the thermal behavior and performance of quantum cascade lasersSubwavelength-scale tailoring of surface phonon polaritons by focused ion-beam implantationExtremely high T0-values (∼450 K) of long-wavelength (∼15 μm), low-threshold-current-density quantum-cascade lasers based on the indirect pump schemeDependence of saturation effects on electron confinement and injector doping in GaAs∕Al0.45Ga0.55As quantum-cascade lasersInfluence of doping density on electron dynamics in GaAs∕AlGaAs quantum cascade lasersQuantum Cascade Laser: An Emerging TechnologyTemperature dependence of the gain profile for terahertz quantum cascade lasers
P2860
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P2860
Continuous wave operation of a mid-infrared semiconductor laser at room temperature.
description
2001 nî lūn-bûn
@nan
2001 թուականի Դեկտեմբերին հրատարակուած գիտական յօդուած
@hyw
2001 թվականի դեկտեմբերին հրատարակված գիտական հոդված
@hy
2001年の論文
@ja
2001年論文
@yue
2001年論文
@zh-hant
2001年論文
@zh-hk
2001年論文
@zh-mo
2001年論文
@zh-tw
2001年论文
@wuu
name
Continuous wave operation of a mid-infrared semiconductor laser at room temperature.
@ast
Continuous wave operation of a mid-infrared semiconductor laser at room temperature.
@en
type
label
Continuous wave operation of a mid-infrared semiconductor laser at room temperature.
@ast
Continuous wave operation of a mid-infrared semiconductor laser at room temperature.
@en
prefLabel
Continuous wave operation of a mid-infrared semiconductor laser at room temperature.
@ast
Continuous wave operation of a mid-infrared semiconductor laser at room temperature.
@en
P2093
P356
P1433
P1476
Continuous wave operation of a mid-infrared semiconductor laser at room temperature.
@en
P2093
Daniel Hofstetter
Emilio Gini
Hans Melchior
Jérôme Faist
Marc Ilegems
Mattias Beck
Thierry Aellen
Ursula Oesterle
P304
P356
10.1126/SCIENCE.1066408
P407
P577
2001-12-20T00:00:00Z