Performance enhancement of capacitive-coupling dual-gate ion-sensitive field-effect transistor in ultra-thin-body
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Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography.A self-amplified transistor immunosensor under dual gate operation: highly sensitive detection of hepatitis B surface antigen.Field-effect sensors - from pH sensing to biosensing: sensitivity enhancement using streptavidin-biotin as a model system.
P2860
Performance enhancement of capacitive-coupling dual-gate ion-sensitive field-effect transistor in ultra-thin-body
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2014 nî lūn-bûn
@nan
2014 թուականի Յունիսին հրատարակուած գիտական յօդուած
@hyw
2014 թվականի հունիսին հրատարակված գիտական հոդված
@hy
2014年の論文
@ja
2014年論文
@yue
2014年論文
@zh-hant
2014年論文
@zh-hk
2014年論文
@zh-mo
2014年論文
@zh-tw
2014年论文
@wuu
name
Performance enhancement of cap ...... transistor in ultra-thin-body
@ast
Performance enhancement of cap ...... transistor in ultra-thin-body
@en
type
label
Performance enhancement of cap ...... transistor in ultra-thin-body
@ast
Performance enhancement of cap ...... transistor in ultra-thin-body
@en
prefLabel
Performance enhancement of cap ...... transistor in ultra-thin-body
@ast
Performance enhancement of cap ...... transistor in ultra-thin-body
@en
P2860
P356
P1433
P1476
Performance enhancement of cap ...... transistor in ultra-thin-body
@en
P2093
Hyun-June Jang
Won-Ju Cho
P2860
P2888
P356
10.1038/SREP05284
P407
P577
2014-06-13T00:00:00Z
P5875
P6179
1033479802