Room-temperature fabrication of ultrathin oxide gate dielectrics for low-voltage operation of organic field-effect transistors.
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Unencapsulated Air-stable Organic Field Effect Transistor by All Solution Processes for Low Power Vapor Sensing.High Critical Current Density of YBa2Cu3O7-x Superconducting Films Prepared through a DUV-assisted Solution Deposition ProcessA Simple Method for High-Performance, Solution-Processed, Amorphous ZrO₂ Gate Insulator TFT with a High Concentration Precursor.Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors.A few-layer molecular film on polymer substrates to enhance the performance of organic devices.Trap Healing for High-Performance Low-Voltage Polymer Transistors and Solution-Based Analog Amplifiers on Foil.Large-Scale Precise Printing of Ultrathin Sol-Gel Oxide Dielectrics for Directly Patterned Solution-Processed Metal Oxide Transistor Arrays.Hybrid cluster precursors of the LaZrO insulator for transistors: lowering the processing temperature.Charge transport characteristics of a high-mobility diketopyrrolopyrrole-based polymer.Fluorinated polymer-grafted organic dielectrics for organic field-effect transistors with low-voltage and electrical stability.Mixed self-assembled monolayer gate dielectrics for low-voltage solution-processed polymer field-effect transistors
P2860
Q27350149-C157A711-DEA3-402A-8CCF-164708C48928Q37460029-D4C0576E-FF2E-4B8C-997B-2DE0F82D0170Q41575509-5A897F12-5328-4FFF-B347-E66EE1E28938Q42228371-988DC4E0-98D7-4872-B5A9-5AD1EA701951Q47236591-BA877766-F6CF-4F1F-A33C-72A1455E5B86Q50921694-14601BEE-97C0-4945-8451-74B258A3C230Q51829420-F826732D-17D5-406D-A45F-3A1C7315C4ECQ52590939-1ACC6B03-28A6-4C5C-8AE6-D823ACB33C7EQ53123779-0634199C-737F-4AF7-BCA3-C3C4BDDC61ACQ53174534-A0C73C4C-F5C3-4838-9296-B67FEC42B287Q57655251-A1EF493B-8B17-4739-9EAB-04A353E92963
P2860
Room-temperature fabrication of ultrathin oxide gate dielectrics for low-voltage operation of organic field-effect transistors.
description
2011 nî lūn-bûn
@nan
2011 թուականի Յունուարին հրատարակուած գիտական յօդուած
@hyw
2011 թվականի հունվարին հրատարակված գիտական հոդված
@hy
2011年の論文
@ja
2011年論文
@yue
2011年論文
@zh-hant
2011年論文
@zh-hk
2011年論文
@zh-mo
2011年論文
@zh-tw
2011年论文
@wuu
name
Room-temperature fabrication o ...... anic field-effect transistors.
@ast
Room-temperature fabrication o ...... anic field-effect transistors.
@en
type
label
Room-temperature fabrication o ...... anic field-effect transistors.
@ast
Room-temperature fabrication o ...... anic field-effect transistors.
@en
prefLabel
Room-temperature fabrication o ...... anic field-effect transistors.
@ast
Room-temperature fabrication o ...... anic field-effect transistors.
@en
P2860
P356
P1433
P1476
Room-temperature fabrication o ...... anic field-effect transistors.
@en
P2093
Alberto Salleo
Jürgen Daniel
P2860
P304
P356
10.1002/ADMA.201003641
P407
P577
2011-01-13T00:00:00Z