about
A two-atom electron pump.A single-atom transistor.Ohm's law survives to the atomic scale.Quantum engineering at the silicon surface using dangling bondsTuning the electron transport at single donors in zinc oxide with a scanning tunnelling microscope.Controlling the screening process of a nanoscaled space charge region by minority carriers.Quantum spin transistor with a Heisenberg spin chain.Band transport across a chain of dopant sites in silicon over micron distances and high temperatures.Magnetic ground state of an individual Fe(2+) ion in strained semiconductor nanostructure.Quantum simulation of the Hubbard model with dopant atoms in silicon.Time-resolved single dopant charge dynamics in silicon.Designing quantum dots for solotronics.Controlled doping by self-assembled dendrimer-like macromolecules.Atom devices based on single dopants in silicon nanostructuresDefect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts.Luminescence, Plasmonic, and Magnetic Properties of Doped Semiconductor Nanocrystals.A minimal double quantum dot.Transport spectroscopy of coupled donors in silicon nano-transistors.Manipulating Mn-Mgk cation complexes to control the charge- and spin-state of Mn in GaNImaging Atomic Scale Dynamics on III-V Nanowire Surfaces During Electrical Operation.Photoluminescence imaging of solitary dopant sites in covalently doped single-wall carbon nanotubes.Single-atom devices: Quantum engineering.Single-electron tunneling through an individual arsenic dopant in silicon.All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics.Ultranarrow and widely tunable Mn2+-Induced photoluminescence from single Mn-doped nanocrystals of ZnS-CdS alloys.Localised quantum states of atomic and molecular particles physisorbed on carbon-based nanoparticles.High-throughput electrical measurement and microfluidic sorting of semiconductor nanowires.Lifetime-enhanced transport in silicon due to spin and valley blockade.Limits to metallic conduction in atomic-scale quasi-one-dimensional silicon wires.Spatially resolving valley quantum interference of a donor in silicon.Single Electron Gating of Topological Insulators.Surface defects and their impact on the electronic structure of Mo-doped CaO films: an STM and DFT study.1D Colloidal Hetero-Nanomaterials with Programmed Semiconductor Morphology and Metal Location for Enhancing Solar Energy Conversion.Arc-melting to narrow the bandgap of oxide semiconductors.Direct observation of dopant atom diffusion in a bulk semiconductor crystal enhanced by a large size mismatch.Phase space crystals: a new way to create a quasienergy band structure.Enhancing doping contrast and optimising quantification in the scanning electron microscope by surface treatment and Fermi level pinning.Transport through a single donor in p-type siliconn-Type Doping of Germanium from Phosphine: Early Stages Resolved at the Atomic LevelImpurity-limited quantum transport variability in magnetic tunnel junctions
P2860
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P2860
description
2011 nî lūn-bûn
@nan
2011 թուականի Փետրուարին հրատարակուած գիտական յօդուած
@hyw
2011 թվականի փետրվարին հրատարակված գիտական հոդված
@hy
2011年の論文
@ja
2011年論文
@yue
2011年論文
@zh-hant
2011年論文
@zh-hk
2011年論文
@zh-mo
2011年論文
@zh-tw
2011年论文
@wuu
name
Single dopants in semiconductors.
@ast
Single dopants in semiconductors.
@en
Single dopants in semiconductors.
@nl
type
label
Single dopants in semiconductors.
@ast
Single dopants in semiconductors.
@en
Single dopants in semiconductors.
@nl
prefLabel
Single dopants in semiconductors.
@ast
Single dopants in semiconductors.
@en
Single dopants in semiconductors.
@nl
P2860
P356
P1433
P1476
Single dopants in semiconductors.
@en
P2093
Michael E Flatté
Paul M Koenraad
P2860
P2888
P304
P356
10.1038/NMAT2940
P407
P577
2011-02-01T00:00:00Z
P5875
P6179
1001147001