DEVICE TECHNOLOGY. Phase patterning for ohmic homojunction contact in MoTe₂. - Wikidata - awgldk - TriplyDB

DEVICE TECHNOLOGY. Phase patterning for ohmic homojunction contact in MoTe₂.

DEVICE TECHNOLOGY. Phase patterning for ohmic homojunction contact in MoTe₂.

http://www.wikidata.org/entity/Q34488614

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Anomalous in-plane anisotropic Raman response of monoclinic semimetal 1 T´-MoTe 2.Low-Temperature Solution Synthesis of Few-Layer 1T '-MoTe2 Nanostructures Exhibiting Lattice Compression.Ferroelasticity and domain physics in two-dimensional transition metal dichalcogenide monolayers Raman scattering and anomalous Stokes-anti-Stokes ratio in MoTe2 atomic layers.Discovery of a new type of topological Weyl fermion semimetal state in MoxW1-xTe2.A Simple Method for Synthesis of High-Quality Millimeter-Scale 1T' Transition-Metal Telluride and Near-Field Nanooptical Properties.Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials.Homogeneous 2D MoTe2 p-n Junctions and CMOS Inverters formed by Atomic-Layer-Deposition-Induced Doping.New Mo6 Te6 Sub-Nanometer-Diameter Nanowire Phase from 2H-MoTe2.Solution-Processed Two-Dimensional Metal Dichalcogenide-Based Nanomaterials for Energy Storage and Conversion.Intrinsically patterned two-dimensional materials for selective adsorption of molecules and nanoclusters.Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides.Characterization of Edge Contact: Atomically Resolved Semiconductor-Metal Lateral Boundary in MoS2.Coplanar semiconductor-metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy.Passivating 1T'-MoTe2 multilayers at elevated temperatures by encapsulation.In Situ Transmission Electron Microscopy Characterization and Manipulation of Two-Dimensional Layered Materials beyond Graphene.Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor.Semiconductor-metal structural phase transformation in MoTe2 monolayers by electronic excitation.Electronic structures and transport properties of a MoS2-NbS2 nanoribbon lateral heterostructure.Electronic properties of layered phosphorus heterostructures.Controlling the H to T' structural phase transition via chalcogen substitution in MoTe2 monolayers.First-principles simulation of local response in transition metal dichalcogenides under electron irradiation.Metal-Semiconductor Phase-Transition in WSe2(1-x) Te2x Monolayer.Large-Area and High-Quality 2D Transition Metal Telluride.In-Plane 2H-1T' MoTe2 Homojunctions Synthesized by Flux-Controlled Phase Engineering.Chain Vacancies in 2D Crystals.Synthesis of High-Quality Large-Area Homogenous 1T' MoTe2 from Chemical Vapor Deposition.Electrostatically tunable lateral MoTe2 p-n junction for use in high-performance optoelectronics.Monolayer Single-Crystal 1T'-MoTe2 Grown by Chemical Vapor Deposition Exhibits Weak Antilocalization Effect.Preparation of Single-Layer MoS(2x)Se2(1-x) and Mo(x)W(1-x)S2 Nanosheets with High-Concentration Metallic 1T Phase.Recent Strategies for Improving the Catalytic Activity of 2D TMD Nanosheets Toward the Hydrogen Evolution Reaction.Predicting a new phase (T'') of two-dimensional transition metal di-chalcogenides and strain-controlled topological phase transition.Atomic Structure of Intrinsic and Electron-Irradiation-Induced Defects in MoTe2.Composition- and phase-controlled synthesis and applications of alloyed phase heterostructures of transition metal disulphides.Characterization of Few-Layer 1T' MoTe2 by Polarization-Resolved Second Harmonic Generation and Raman Scattering.Hexagonal MoTe2 with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors.Room-Temperature Nanoseconds Spin Relaxation in WTe2 and MoTe2 Thin Films.Plasma-Induced Phase Transformation of SnS2 to SnS.Transformation of monolayer MoS2 into multiphasic MoTe2: Chalcogen atom-exchange synthesis route

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DEVICE TECHNOLOGY. Phase patterning for ohmic homojunction contact in MoTe₂.

http://www.wikidata.org/entity/Q34488614

description

2015 nî lūn-bûn

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2015 թուականի Օգոստոսին հրատարակուած գիտական յօդուած

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2015 թվականի օգոստոսին հրատարակված գիտական հոդված

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2015年の論文

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2015年論文

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2015年論文

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2015年論文

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2015年論文

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2015年論文

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2015年论文

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name

DEVICE TECHNOLOGY. Phase patterning for ohmic homojunction contact in MoTe₂.

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DEVICE TECHNOLOGY. Phase patterning for ohmic homojunction contact in MoTe₂.

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DEVICE TECHNOLOGY. Phase patterning for ohmic homojunction contact in MoTe₂.

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DEVICE TECHNOLOGY. Phase patterning for ohmic homojunction contact in MoTe₂.

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DEVICE TECHNOLOGY. Phase patterning for ohmic homojunction contact in MoTe₂.

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DEVICE TECHNOLOGY. Phase patterning for ohmic homojunction contact in MoTe₂.

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DEVICE TECHNOLOGY. Phase patterning for ohmic homojunction contact in MoTe₂.

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DEVICE TECHNOLOGY. Phase patterning for ohmic homojunction contact in MoTe₂.

@en

DEVICE TECHNOLOGY. Phase patterning for ohmic homojunction contact in MoTe₂.

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SCIENCE.AAB3175

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DEVICE TECHNOLOGY. Phase patterning for ohmic homojunction contact in MoTe₂

@en

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Dong Hoon Keum

http://www.w3.org/2001/XMLSchema#string

Heejun Yang

http://www.w3.org/2001/XMLSchema#string

Jaeyoon Baik

http://www.w3.org/2001/XMLSchema#string

Jinbong Seok

http://www.w3.org/2001/XMLSchema#string

Jung Ho Kim

http://www.w3.org/2001/XMLSchema#string

K J Chang

http://www.w3.org/2001/XMLSchema#string

Sera Kim

http://www.w3.org/2001/XMLSchema#string

Sung Wng Kim

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Young Hee Lee

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625-628

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scholarly article

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10.1126/SCIENCE.AAB3175

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6248

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349

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2015-08-01T00:00:00Z

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26250680

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