Revealing controllable nanowire transformation through cationic exchange for RRAM application.
about
Status and Prospects of ZnO-Based Resistive Switching Memory Devices.Resistive Switching of Individual, Chemically Synthesized TiO2 Nanoparticles.A solid-state cation exchange reaction to form multiple metal oxide heterostructure nanowires.Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials.Solid-State Diffusional Behaviors of Functional Metal Oxides at Atomic Scale.Observation of Resistive Switching Behavior in Crossbar Core-Shell Ni/NiO Nanowires Memristor.Direct Observation of Dual-Filament Switching Behaviors in Ta2 O5 -Based Memristors.Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament.Cation Exchange Synthesis and Unusual Resistive Switching Behaviors of Ag2Se Nanobelts.
P2860
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P2860
Revealing controllable nanowire transformation through cationic exchange for RRAM application.
description
2014 nî lūn-bûn
@nan
2014 թուականի Ապրիլին հրատարակուած գիտական յօդուած
@hyw
2014 թվականի ապրիլին հրատարակված գիտական հոդված
@hy
2014年の論文
@ja
2014年論文
@yue
2014年論文
@zh-hant
2014年論文
@zh-hk
2014年論文
@zh-mo
2014年論文
@zh-tw
2014年论文
@wuu
name
Revealing controllable nanowir ...... exchange for RRAM application.
@ast
Revealing controllable nanowir ...... exchange for RRAM application.
@en
type
label
Revealing controllable nanowir ...... exchange for RRAM application.
@ast
Revealing controllable nanowir ...... exchange for RRAM application.
@en
prefLabel
Revealing controllable nanowir ...... exchange for RRAM application.
@ast
Revealing controllable nanowir ...... exchange for RRAM application.
@en
P356
P1433
P1476
Revealing controllable nanowir ...... exchange for RRAM application
@en
P2093
Chung-Hua Chiu
Jui-Yuan Chen
P304
P356
10.1021/NL500749Q
P407
P577
2014-04-21T00:00:00Z