Thickness-Dependent Dielectric Constant of Few-Layer In₂Se₃ Nanoflakes.
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Booming Development of Group IV-VI Semiconductors: Fresh Blood of 2D Family.Synthesis, properties and applications of 2D layered M(III)X(VI) (M = Ga, In; X = S, Se, Te) materials.Vertical dielectric screening of few-layer van der Waals semiconductors.Unusual phonon behavior and ultra-low thermal conductance of monolayer InSe.Zero-static power radio-frequency switches based on MoS2 atomristors.Two-dimensional semiconductors pave the way towards dopant-based quantum computing
P2860
Thickness-Dependent Dielectric Constant of Few-Layer In₂Se₃ Nanoflakes.
description
2015 nî lūn-bûn
@nan
2015年の論文
@ja
2015年論文
@yue
2015年論文
@zh-hant
2015年論文
@zh-hk
2015年論文
@zh-mo
2015年論文
@zh-tw
2015年论文
@wuu
2015年论文
@zh
2015年论文
@zh-cn
name
Thickness-Dependent Dielectric Constant of Few-Layer In₂Se₃ Nanoflakes.
@ast
Thickness-Dependent Dielectric Constant of Few-Layer In₂Se₃ Nanoflakes.
@en
type
label
Thickness-Dependent Dielectric Constant of Few-Layer In₂Se₃ Nanoflakes.
@ast
Thickness-Dependent Dielectric Constant of Few-Layer In₂Se₃ Nanoflakes.
@en
prefLabel
Thickness-Dependent Dielectric Constant of Few-Layer In₂Se₃ Nanoflakes.
@ast
Thickness-Dependent Dielectric Constant of Few-Layer In₂Se₃ Nanoflakes.
@en
P2093
P50
P1433
P1476
Thickness-Dependent Dielectric Constant of Few-Layer In₂Se₃ Nanoflakes.
@en
P2093
Gyeong S Hwang
Hailin Peng
Yingnan Liu
Yu-Hao Tsai
P304
P356
10.1021/ACS.NANOLETT.5B03575
P407
P577
2015-11-17T00:00:00Z
P5875
P698
P818
1511.07325