A Fully Transparent Resistive Memory for Harsh Environments

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Transparent Memory For Harsh Electronics.Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions.

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Q37698690-6AF114CD-0A23-4D94-90A2-7747CF690351 Q41564832-F20F63FF-4950-40FC-94C5-A230A0DA12FD

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A Fully Transparent Resistive Memory for Harsh Environments

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http://www.wikidata.org/entity/Q36146599

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2015 nî lūn-bûn

@nan

2015年の論文

@ja

2015年論文

@yue

2015年論文

@zh-hant

2015年論文

@zh-hk

2015年論文

@zh-mo

2015年論文

@zh-tw

2015年论文

@wuu

2015年论文

@zh

2015年论文

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name

A Fully Transparent Resistive Memory for Harsh Environments

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A Fully Transparent Resistive Memory for Harsh Environments

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Item

label

A Fully Transparent Resistive Memory for Harsh Environments

@ast

A Fully Transparent Resistive Memory for Harsh Environments

@en

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A Fully Transparent Resistive Memory for Harsh Environments

@ast

A Fully Transparent Resistive Memory for Harsh Environments

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P1476

A Fully Transparent Resistive Memory for Harsh Environments

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Chen-Fang Kang

http://www.w3.org/2001/XMLSchema#string

Chih-Hsiang Ho

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Der-Hsien Lien

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Jr-Hau He

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Kuan-Ming Chen

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Po-Kang Yang

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Teng-Han Huang

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Yueh-Chung Yu

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P2860

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Resistive memory for harsh electronics: immunity to surface effect and high corrosion resistance via surface modification.

HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.

Ultrathin silicon solar microcells for semitransparent, mechanically flexible and microconcentrator module designs.

All-printed paper memory.

Transferable and flexible label-like macromolecular memory on arbitrary substrates with high performance and a facile methodology.

Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.

Multiple conducting carriers generated in LaAlO3/SrTiO3 heterostructures

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srep15087

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15087

http://www.w3.org/2001/XMLSchema#string

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scholarly article

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10.1038/SREP15087

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English

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P50

José Ramón Durán Retamal

Chih-I Wu

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2015-10-12T00:00:00Z

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P5875

282812834

http://www.w3.org/2001/XMLSchema#string

P698

26455819

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4601025

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A Fully Transparent Resistive Memory for Harsh Environments

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P2860

P2860

A Fully Transparent Resistive Memory for Harsh Environments

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type

label

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P1433

P1476

P2093

P2860

P2888

P304

P31

P356

P407

P478

P50

P577

P5875

P698

P932

P356

P1433

P1476

P2093

P2860

P2888

P304

P31

P356

P407

P478

P50

P577

P5875

P698

P932