Memristive properties of hexagonal WO3 nanowires induced by oxygen vacancy migration
about
Noble metal-comparable SERS enhancement from semiconducting metal oxides by making oxygen vacanciesModulating memristive performance of hexagonal WO3 nanowire by water-oxidized hydrogen ion implantationPt/WO3/FTO memristive devices with recoverable pseudo-electroforming for time-delay switches in neuromorphic computing.
P2860
Memristive properties of hexagonal WO3 nanowires induced by oxygen vacancy migration
description
2013 nî lūn-bûn
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2013年の論文
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2013年論文
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2013年論文
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2013年論文
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2013年論文
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2013年論文
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2013年论文
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2013年论文
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2013年论文
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name
Memristive properties of hexagonal WO3 nanowires induced by oxygen vacancy migration
@ast
Memristive properties of hexagonal WO3 nanowires induced by oxygen vacancy migration
@en
type
label
Memristive properties of hexagonal WO3 nanowires induced by oxygen vacancy migration
@ast
Memristive properties of hexagonal WO3 nanowires induced by oxygen vacancy migration
@en
prefLabel
Memristive properties of hexagonal WO3 nanowires induced by oxygen vacancy migration
@ast
Memristive properties of hexagonal WO3 nanowires induced by oxygen vacancy migration
@en
P2093
P2860
P356
P1476
Memristive properties of hexagonal WO3 nanowires induced by oxygen vacancy migration
@en
P2093
Dongsheng Tang
Huajun Yuan
Weichang Zhou
Xiongwu He
Yanling Yin
Yuehua Peng
P2860
P2888
P356
10.1186/1556-276X-8-50
P577
2013-01-24T00:00:00Z
P6179
1047906559