Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices.
about
Ag-Decorated Localized Surface Plasmon-Enhanced Ultraviolet Electroluminescence from ZnO Quantum Dot-Based/GaN Heterojunction Diodes by Optimizing MgO Interlayer Thickness.Significant improvement of near-UV electroluminescence from ZnO quantum dot LEDs via coupling with carbon nanodot surface plasmons.
P2860
Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices.
description
2016 nî lūn-bûn
@nan
2016年の論文
@ja
2016年論文
@yue
2016年論文
@zh-hant
2016年論文
@zh-hk
2016年論文
@zh-mo
2016年論文
@zh-tw
2016年论文
@wuu
2016年论文
@zh
2016年论文
@zh-cn
name
Plasmon-enhanced Electrically ...... p-GaN Heterostructure Devices.
@en
type
label
Plasmon-enhanced Electrically ...... p-GaN Heterostructure Devices.
@en
prefLabel
Plasmon-enhanced Electrically ...... p-GaN Heterostructure Devices.
@en
P2093
P2860
P356
P1433
P1476
Plasmon-enhanced Electrically ...... p-GaN Heterostructure Devices.
@en
P2093
Chunxiang Xu
Qiuxiang Zhu
Shufeng Wang
Yueyue Wang
Zengliang Shi
Zhengshan Tian
P2860
P2888
P356
10.1038/SREP25645
P407
P50
P577
2016-05-16T00:00:00Z