Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes.
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Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM.Stateful characterization of resistive switching TiO2 with electron beam induced currents.On-Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics.Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors.
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Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes.
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scientific article published on 19 August 2016
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Quantifying redox-induced Scho ...... copy with graphene electrodes.
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Quantifying redox-induced Scho ...... copy with graphene electrodes.
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Quantifying redox-induced Scho ...... copy with graphene electrodes.
@en
Quantifying redox-induced Scho ...... copy with graphene electrodes.
@nl
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Quantifying redox-induced Scho ...... copy with graphene electrodes.
@en
Quantifying redox-induced Scho ...... copy with graphene electrodes.
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Quantifying redox-induced Scho ...... scopy with graphene electrodes
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Astrid Marchewka
Claus Michael Schneider
David N Mueller
Johanna Hackl
M Imtiaz Khan
Nicolas Raab
Richard Valenta
Stephan Menzel
Steven P Rogers
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P2888
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10.1038/NCOMMS12398
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P577
2016-08-19T00:00:00Z