Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures.
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First-principles study of nonmetal doped monolayer MoSe2 for tunable electronic and photocatalytic properties.Thermal dissociation of inter-layer excitons in MoS2/MoSe2 hetero-bilayers.Hexagonal MoTe2 with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors.
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Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures.
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article científic
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article scientifique
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articolo scientifico
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artigo científico
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bilimsel makale
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scientific article published on 14 December 2016
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vedecký článok
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vetenskaplig artikel
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videnskabelig artikel
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vědecký článek
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name
Bandgap renormalization and work function tuning in MoSe2/hBN/Ru
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Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures.
@en
type
label
Bandgap renormalization and work function tuning in MoSe2/hBN/Ru
@nl
Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures.
@en
prefLabel
Bandgap renormalization and work function tuning in MoSe2/hBN/Ru
@nl
Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures.
@en
P2093
P2860
P356
P1476
Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures.
@en
P2093
Changgan Zeng
Chendong Zhang
Chi-Ruei Pan
Chih-Kang Shih
Qiang Zhang
Yuxuan Chen
P2860
P2888
P356
10.1038/NCOMMS13843
P407
P50
P577
2016-12-14T00:00:00Z
P698
P818
1609.01777