Formation of Self-Connected Si0.8Ge0.2 Lateral Nanowires and Pyramids on Rib-Patterned Si(1 1 10) Substrate.
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Formation of Self-Connected Si0.8Ge0.2 Lateral Nanowires and Pyramids on Rib-Patterned Si(1 1 10) Substrate.
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article científic
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article scientifique
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articolo scientifico
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artigo científico
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bilimsel makale
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scientific article published on 24 January 2017
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vedecký článok
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vetenskaplig artikel
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videnskabelig artikel
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vědecký článek
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name
Formation of Self-Connected Si0.8Ge0.2 Lateral Nanowires and Pyramids on Rib-Patterned Si
@nl
Formation of Self-Connected Si ...... atterned Si(1 1 10) Substrate.
@en
type
label
Formation of Self-Connected Si0.8Ge0.2 Lateral Nanowires and Pyramids on Rib-Patterned Si
@nl
Formation of Self-Connected Si ...... atterned Si(1 1 10) Substrate.
@en
prefLabel
Formation of Self-Connected Si0.8Ge0.2 Lateral Nanowires and Pyramids on Rib-Patterned Si
@nl
Formation of Self-Connected Si ...... atterned Si(1 1 10) Substrate.
@en
P2860
P1476
Formation of Self-Connected Si ...... Patterned Si(1 1 10) Substrate
@en
P2860
P2888
P356
10.1186/S11671-016-1820-Z
P50
P577
2017-01-24T00:00:00Z
P6179
1074211525