Field-effect transistors based on few-layered α-MoTe(2).
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Low-Temperature Solution Synthesis of Few-Layer 1T '-MoTe2 Nanostructures Exhibiting Lattice Compression.Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gatingBlack Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature.Raman scattering and anomalous Stokes-anti-Stokes ratio in MoTe2 atomic layers.DEVICE TECHNOLOGY. Nanomaterials in transistors: From high-performance to thin-film applications.Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe2/n-MoS2 van der Waals heterojunctions.Homogeneous 2D MoTe2 p-n Junctions and CMOS Inverters formed by Atomic-Layer-Deposition-Induced Doping.Emerging tellurium nanostructures: controllable synthesis and their applications.Single-crystalline germanium nanomembrane photodetectors on foreign nanocavities.Zeeman splitting via spin-valley-layer coupling in bilayer MoTe2.Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition.Two-Dimensional Semiconductors Grown by Chemical Vapor Transport.Pronounced Photovoltaic Response from Multi-layered MoTe2 Phototransistor with Asymmetric Contact Form.Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides.Large area growth of MoTe2 films as high performance counter electrodes for dye-sensitized solar cells.A ferroelectric relaxor polymer-enhanced p-type WSe2 transistor.Carrier-Type Modulation and Mobility Improvement of Thin MoTe2.Carbon/two-dimensional MoTe2 core/shell-structured microspheres as an anode material for Na-ion batteries.Electric and Photovoltaic Behavior of a Few-Layer α-MoTe2 /MoS2 Dichalcogenide Heterojunction.Role of Charge Traps in the Performance of Atomically Thin Transistors.Synthesis of High-Quality Large-Area Homogenous 1T' MoTe2 from Chemical Vapor Deposition.Electrostatically tunable lateral MoTe2 p-n junction for use in high-performance optoelectronics.Origin of Noise in Layered MoTe₂ Transistors and its Possible Use for Environmental Sensors.Material Synthesis and Device Aspects of Monolayer Tungsten Diselenide.Characterization of Few-Layer 1T' MoTe2 by Polarization-Resolved Second Harmonic Generation and Raman Scattering.Hexagonal MoTe2 with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors.Growth and synthesis of mono and few-layers transition metal dichalcogenides by vapour techniques: a reviewPhotodetectors Based on Two-Dimensional Layered Materials Beyond GraphenePhysical origin of Davydov splitting and resonant Raman spectroscopy of Davydov components in multilayerMoTe2Ultrathin 2D GeSe2 Rhombic Flakes with High Anisotropy Realized by Van der Waals EpitaxyConversion of Multi-layered MoTe Transistor Between P-Type and N-Type and Their Use in InverterPhase Modulators Based on High Mobility Ambipolar ReSe Field-Effect Transistors
P2860
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P2860
Field-effect transistors based on few-layered α-MoTe(2).
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年論文
@yue
2014年論文
@zh-hant
2014年論文
@zh-hk
2014年論文
@zh-mo
2014年論文
@zh-tw
2014年论文
@wuu
2014年论文
@zh
2014年论文
@zh-cn
name
Field-effect transistors based on few-layered α-MoTe(2).
@en
type
label
Field-effect transistors based on few-layered α-MoTe(2).
@en
prefLabel
Field-effect transistors based on few-layered α-MoTe(2).
@en
P2093
P50
P356
P1433
P1476
Field-effect transistors based on few-layered α-MoTe(2).
@en
P2093
Byoung-Hee Moon
Daniel Rhodes
Nihar R Pradhan
Shahriar Memaran
Simin Feng
P304
P356
10.1021/NN501013C
P407
P577
2014-06-04T00:00:00Z