Nanogap Electrodes towards Solid State Single-Molecule Transistors.
about
Optical modulation of nano-gap tunnelling junctions comprising self-assembled monolayers of hemicyanine dyesMass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory.Field emission and anode etching during formation of length-controlled nanogaps in electrical breakdown of horizontally aligned single-walled carbon nanotubes.Epitaxially-crystallized oriented naphthalene bis(dicarboximide) morphology for significant performance improvement of electron-transporting thin-film transistors.Massively parallel fabrication of crack-defined gold break junctions featuring sub-3 nm gaps for molecular devices
P2860
Nanogap Electrodes towards Solid State Single-Molecule Transistors.
description
2015 nî lūn-bûn
@nan
2015年の論文
@ja
2015年論文
@yue
2015年論文
@zh-hant
2015年論文
@zh-hk
2015年論文
@zh-mo
2015年論文
@zh-tw
2015年论文
@wuu
2015年论文
@zh
2015年论文
@zh-cn
name
Nanogap Electrodes towards Solid State Single-Molecule Transistors.
@en
type
label
Nanogap Electrodes towards Solid State Single-Molecule Transistors.
@en
prefLabel
Nanogap Electrodes towards Solid State Single-Molecule Transistors.
@en
P2093
P2860
P356
P1433
P1476
Nanogap Electrodes towards Solid State Single-Molecule Transistors.
@en
P2093
Huanli Dong
Wenping Hu
P2860
P304
P356
10.1002/SMLL.201501283
P577
2015-10-09T00:00:00Z