Surface effects in metal oxide-based nanodevices.

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Transparent Memory For Harsh Electronics.Diverging Time Scale in the Dimensional Crossover for Liquids in Strong Confinement.Ultrahigh, Ultrafast, and Self-Powered Visible-Near-Infrared Optical Position-Sensitive Detector Based on a CVD-Prepared Vertically Standing Few-Layer MoS2/Si Heterojunction.

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P2860

Surface effects in metal oxide-based nanodevices.

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2015 nî lūn-bûn

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name

Surface effects in metal oxide-based nanodevices.

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Surface effects in metal oxide-based nanodevices.

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Surface effects in metal oxide-based nanodevices.

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Surface effects in metal oxide-based nanodevices.

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P2093

Chen-Fang Kang

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Der-Hsien Lien

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José Ramón Durán Retamal

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Jr-Hau He

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Jr-Jian Ke

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P2860

Nanoionics-based resistive switching memories

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Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor.

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors.

Roll-to-roll production of 30-inch graphene films for transparent electrodes.

Broadband light management using low-Q whispering gallery modes in spherical nanoshells.

Zinc oxide nanostructures: synthesis and properties.

Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratio.

Resistive memory for harsh electronics: immunity to surface effect and high corrosion resistance via surface modification.

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scholarly article

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10.1039/C5NR06494E

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English

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2015-11-18T00:00:00Z

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Surface effects in metal oxide-based nanodevices.

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P2860

P2860

Surface effects in metal oxide-based nanodevices.

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P1476

P2093

P2860

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