Resistive switching of Sn-doped In2O3/HfO2 core-shell nanowire: geometry architecture engineering for nonvolatile memory.
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Resistive switching of Sn-doped In2O3/HfO2 core-shell nanowire: geometry architecture engineering for nonvolatile memory.
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2017 nî lūn-bûn
@nan
2017年の論文
@ja
2017年論文
@yue
2017年論文
@zh-hant
2017年論文
@zh-hk
2017年論文
@zh-mo
2017年論文
@zh-tw
2017年论文
@wuu
2017年论文
@zh
2017年论文
@zh-cn
name
Resistive switching of Sn-dope ...... eering for nonvolatile memory.
@en
type
label
Resistive switching of Sn-dope ...... eering for nonvolatile memory.
@en
prefLabel
Resistive switching of Sn-dope ...... eering for nonvolatile memory.
@en
P2093
P2860
P356
P1433
P1476
Resistive switching of Sn-dope ...... neering for nonvolatile memory
@en
P2093
Chi-Hsin Huang
Jian-Shiou Huang
Shih-Ming Lin
Wen-Chih Chang
P2860
P304
P356
10.1039/C6NR09564J
P407
P50
P577
2017-05-01T00:00:00Z