Chemical Vapor Deposition Synthesis of Ultrathin Hexagonal ReSe2 Flakes for Anisotropic Raman Property and Optoelectronic Application.
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Re Doping in 2D Transition Metal Dichalcogenides as a New Route to Tailor Structural Phases and Induced Magnetism.Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides.Synthesis of Large-Size 1T' ReS2x Se2(1-x) Alloy Monolayer with Tunable Bandgap and Carrier Type.Large-Area Atomic Layers of the Charge-Density-Wave Conductor TiSe2.Layer Structured Materials for Advanced Energy Storage and Conversion.Damage-free and rapid transfer of CVD-grown two-dimensional transition metal dichalcogenides by dissolving sacrificial water-soluble layers.Non-planar vertical photodetectors based on free standing two-dimensional SnS2 nanosheets.Controlled growth of large-area anisotropic ReS2 atomic layer and its photodetector application.Highly Efficient Infrared Photodetection in a Gate-Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment.Application of chemical vapor–deposited monolayer ReSe2 in the electrocatalytic hydrogen evolution reactionControlled Synthesis of Ultrathin 2D β-In2 S3 with Broadband Photoresponse by Chemical Vapor DepositionNanostructured Materials and Architectures for Advanced Infrared PhotodetectionFew-Layered PtS2 Phototransistor on h-BN with High GainNarrowband spectrally selective near-infrared photodetector based on up-conversion nanoparticles used in a 2D hybrid deviceRhenium dichalcogenides (ReX2, X = S or Se): an emerging class of TMDs familyTwo-Dimensional Nanostructured Materials for Gas SensingPhase Modulators Based on High Mobility Ambipolar ReSe Field-Effect Transistors
P2860
Q46116091-70E616AA-9BA2-4065-9A73-6003D36C1130Q47133679-D3EE273C-C2B1-486F-BC0D-AA7BDDF45791Q47180523-4FB6A14E-9BE0-425F-9687-AA345D07887FQ47566138-572744C0-7755-4364-8956-A64E5BAF6FDAQ47679721-04313BF3-709C-4742-BF76-A6C07852032AQ47777624-A694A4EE-459B-4954-A4F0-A412911D00F3Q50561226-68956075-A93A-47C9-BE7F-77DC3A1956D4Q51112068-36E688E7-89D8-4BA9-9CF2-5E9D0FBD37A2Q55333384-F81CDFE3-268E-4705-B58F-B5310056BFD9Q57962168-B116167D-08F6-46E8-AAA9-A555AF60DBF5Q58202216-1AAD8576-E364-4DEE-9F91-C044807C76A2Q58202220-E7D80D0E-188E-4D3B-9A14-8BC1D3BA2973Q58202222-2F9DC73A-6246-49BA-B721-95C3C7162C56Q58202242-CE01221E-1893-4065-BBD8-C9115BEB0C82Q58202254-F4AF8A24-30B9-45C2-BBFB-8390DA49444EQ58208052-8CE4BE0B-58F6-4C02-A24A-A81C76717050Q58707892-AC0994E5-D6CC-4C1F-9D4D-C4752FA6E971
P2860
Chemical Vapor Deposition Synthesis of Ultrathin Hexagonal ReSe2 Flakes for Anisotropic Raman Property and Optoelectronic Application.
description
2016 nî lūn-bûn
@nan
2016年の論文
@ja
2016年論文
@yue
2016年論文
@zh-hant
2016年論文
@zh-hk
2016年論文
@zh-mo
2016年論文
@zh-tw
2016年论文
@wuu
2016年论文
@zh
2016年论文
@zh-cn
name
Chemical Vapor Deposition Synt ...... nd Optoelectronic Application.
@en
type
label
Chemical Vapor Deposition Synt ...... nd Optoelectronic Application.
@en
prefLabel
Chemical Vapor Deposition Synt ...... nd Optoelectronic Application.
@en
P2093
P356
P1433
P1476
Chemical Vapor Deposition Synt ...... and Optoelectronic Application
@en
P2093
Huiqiao Li
Muhammad Hafeez
P304
P356
10.1002/ADMA.201601977
P407
P577
2016-07-08T00:00:00Z