Near Room-Temperature Memory Devices Based on Hybrid Spin-Crossover@SiO2 Nanoparticles Coupled to Single-Layer Graphene Nanoelectrodes.
about
Spin Crossover Nanomaterials: From Fundamental Concepts to Devices.Iron(iii) complexes of 2-methyl-6-(pyrimidin-2-yl-hydrazonomethyl)-phenol as spin-crossover molecular materials.Single ion magnets based on lanthanoid polyoxomolybdate complexes.Evolution of cooperativity in the spin transition of an iron(II) complex on a graphite surface
P2860
Near Room-Temperature Memory Devices Based on Hybrid Spin-Crossover@SiO2 Nanoparticles Coupled to Single-Layer Graphene Nanoelectrodes.
description
2016 nî lūn-bûn
@nan
2016年の論文
@ja
2016年論文
@yue
2016年論文
@zh-hant
2016年論文
@zh-hk
2016年論文
@zh-mo
2016年論文
@zh-tw
2016年论文
@wuu
2016年论文
@zh
2016年论文
@zh-cn
name
Near Room-Temperature Memory D ...... Layer Graphene Nanoelectrodes.
@en
type
label
Near Room-Temperature Memory D ...... Layer Graphene Nanoelectrodes.
@en
prefLabel
Near Room-Temperature Memory D ...... Layer Graphene Nanoelectrodes.
@en
P2860
P50
P356
P1433
P1476
Near Room-Temperature Memory D ...... Layer Graphene Nanoelectrodes.
@en
P2093
Anastasia Holovchenko
Herre S J van der Zant
P2860
P304
P356
10.1002/ADMA.201600890
P407
P577
2016-05-17T00:00:00Z