Rational design of new materials for spintronics: Co2FeZ (Z=Al, Ga, Si, Ge).
about
Electric field tunable half-metallic characteristic at Fe3O4/BaTiO3 interfaces.Anomalous transport properties of the half-metallic ferromagnets Co₂TiSi, Co₂TiGe and Co₂TiSn.The role of chemical structure on the magnetic and electronic properties of Co2FeAl0.5Si0.5/Si(111) interfaceSurface spin polarization of the nonstoichiometric Heusler alloy Co2MnSi
P2860
Rational design of new materials for spintronics: Co2FeZ (Z=Al, Ga, Si, Ge).
description
2008 nî lūn-bûn
@nan
2008年の論文
@ja
2008年論文
@yue
2008年論文
@zh-hant
2008年論文
@zh-hk
2008年論文
@zh-mo
2008年論文
@zh-tw
2008年论文
@wuu
2008年论文
@zh
2008年论文
@zh-cn
name
Rational design of new materials for spintronics: Co2FeZ (Z=Al, Ga, Si, Ge).
@en
Rational design of new materials for spintronics: Co2FeZ (Z=Al, Ga, Si, Ge).
@nl
type
label
Rational design of new materials for spintronics: Co2FeZ (Z=Al, Ga, Si, Ge).
@en
Rational design of new materials for spintronics: Co2FeZ (Z=Al, Ga, Si, Ge).
@nl
prefLabel
Rational design of new materials for spintronics: Co2FeZ (Z=Al, Ga, Si, Ge).
@en
Rational design of new materials for spintronics: Co2FeZ (Z=Al, Ga, Si, Ge).
@nl
P2860
P50
P356
P1476
Rational design of new materials for spintronics: Co2FeZ (Z=Al, Ga, Si, Ge).
@en
P2093
Jürgen Kübler
Sabine Wurmehl
P2860
P304
P356
10.1088/1468-6996/9/1/014102
P577
2008-01-01T00:00:00Z