Inverted quantum dot light emitting diodes using polyethylenimine ethoxylated modified ZnO.
about
High performance blue quantum dot light-emitting diodes employing polyethylenimine ethoxylated as the interfacial modifier.Efficient quantum dot light-emitting diodes with a Zn0.85Mg0.15O interfacial modification layer.Enhanced device lifetime of double-heterojunction nanorod light-emitting diodes.The Role of Emission Layer Morphology on the Enhanced Performance of Light-Emitting Diodes Based on Quantum Dot-Semiconducting Polymer Hybrids
P2860
Inverted quantum dot light emitting diodes using polyethylenimine ethoxylated modified ZnO.
description
2015 nî lūn-bûn
@nan
2015年の論文
@ja
2015年論文
@yue
2015年論文
@zh-hant
2015年論文
@zh-hk
2015年論文
@zh-mo
2015年論文
@zh-tw
2015年论文
@wuu
2015年论文
@zh
2015年论文
@zh-cn
name
Inverted quantum dot light emi ...... mine ethoxylated modified ZnO.
@en
Inverted quantum dot light emi ...... mine ethoxylated modified ZnO.
@nl
type
label
Inverted quantum dot light emi ...... mine ethoxylated modified ZnO.
@en
Inverted quantum dot light emi ...... mine ethoxylated modified ZnO.
@nl
prefLabel
Inverted quantum dot light emi ...... mine ethoxylated modified ZnO.
@en
Inverted quantum dot light emi ...... mine ethoxylated modified ZnO.
@nl
P2093
P2860
P356
P1433
P1476
Inverted quantum dot light emi ...... mine ethoxylated modified ZnO.
@en
P2093
Cheolmin Park
Do Kyung Hwang
Dong Ick Son
Hong Hee Kim
Soohyung Park
Won Kook Choi
P2860
P2888
P356
10.1038/SREP08968
P407
P50
P577
2015-03-10T00:00:00Z
P5875
P6179
1029783975