Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary.
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Synthesis of Large-Area WS2 monolayers with Exceptional Photoluminescence.One-step Synthesis of Few-layer WS2 by Pulsed Laser DepositionCVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors.Controlled vapor phase growth of single crystalline, two-dimensional GaSe crystals with high photoresponse.Nucleation control for large, single crystalline domains of monolayer hexagonal boron nitride via Si-doped Fe catalysts.Large-Area Epitaxial Monolayer MoS2.Stable, highly-responsive and broadband photodetection based on large-area multilayered WS2 films grown by pulsed-laser deposition.Dichroic spin-valley photocurrent in monolayer molybdenum disulphide.Large-area synthesis of high-quality and uniform monolayer WS2 on reusable Au foilsTop-Down Integration of Molybdenum Disulfide Transistors with Wafer-Scale Uniformity and Layer Controllability.High-responsivity UV-Vis Photodetector Based on Transferable WS2 Film Deposited by Magnetron SputteringControl of Radiative Exciton Recombination by Charge Transfer Induced Surface Dipoles in MoS2 and WS2 Monolayers.Booming Development of Group IV-VI Semiconductors: Fresh Blood of 2D Family.Chemical vapour deposition of group-VIB metal dichalcogenide monolayers: engineered substrates from amorphous to single crystalline.Band engineering for novel two-dimensional atomic layers.Photocurrent generation with two-dimensional van der Waals semiconductors.Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects.Chemical Vapor Deposition of Monolayer Mo(1-x)W(x)S2 Crystals with Tunable Band Gaps.Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.Progress of Large-Scale Synthesis and Electronic Device Application of Two-Dimensional Transition Metal Dichalcogenides.Morphological Engineering of CVD-Grown Transition Metal Dichalcogenides for Efficient Electrochemical Hydrogen Evolution.Flexible and stretchable thin-film transistors based on molybdenum disulphide.Chelant Enhanced Solution Processing for Wafer Scale Synthesis of Transition Metal Dichalcogenide Thin FilmsTemperature dependence of band gap in MoSe2 grown by molecular beam epitaxy.High-quality monolayer superconductor NbSe2 grown by chemical vapour deposition.Large-Area WS2 Film with Big Single Domains Grown by Chemical Vapor Deposition.Two-dimensional metallic tantalum disulfide as a hydrogen evolution catalyst.High-Mobility and High-Optical Quality Atomically Thin WS 2.Robust epitaxial growth of two-dimensional heterostructures, multiheterostructures, and superlattices.Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions.Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions.Two step growth phenomena of molybdenum disulfide-tungsten disulfide heterostructures.A Generalized Strategy for the Synthesis of Large-Size Ultrathin Two-Dimensional Metal Oxide Nanosheets.Two-step synthesis and characterization of vertically stacked SnS-WS2 and SnS-MoS2 p-n heterojunctions.Ultrafast interfacial energy transfer and interlayer excitons in the monolayer WS2/CsPbBr3 quantum dot heterostructure.Surface Plasmon Resonance Sensors on Raman and Fluorescence Spectroscopy.Two-dimensional nanomaterial-based field-effect transistors for chemical and biological sensing.A General Method for the Chemical Synthesis of Large-Scale, Seamless Transition Metal Dichalcogenide Electronics.Direct Growth of High Mobility and Low-Noise Lateral MoS2 -Graphene Heterostructure Electronics.Achieving Uniform Monolayer Transition Metal Dichalcogenides Film on Silicon Wafer via Silanization Treatment: A Typical Study on WS2.
P2860
Q30392840-5855D0A1-7ED2-43D0-BDF6-BE32B5C820CAQ30395955-2DC744D2-19AE-4BEE-9355-28945705F51FQ33462036-4C0E4AF2-F0AB-44AC-B586-3E10B618A2A1Q33820221-7F29840E-4DF5-4BF3-BE16-442D1204E063Q35172528-B09E7B1A-EEC0-4DA0-A6F7-EC082213C7BBQ35556575-7DCF0893-77D5-4FB9-B9BA-29F801CB0ED1Q35755671-B6C3938A-51DB-4D69-9FC2-808A0E5B1A92Q35863412-108419DF-55AD-415B-A915-9DD73E591CCDQ36250825-03F87941-D3D9-4C0E-88B5-9AB5B09731C3Q36412022-81D186BD-ED51-487F-AF75-8547EBB77780Q36516953-7D445EE0-221E-4471-8737-FFC7233A4A00Q36773922-5427A043-F371-461F-987E-95F74FC8B9E8Q37505119-94CB6682-816F-45CD-A4C3-948EE9D54328Q38254336-C213A846-F8ED-48C4-AB8E-B3B4F7D54643Q38289160-A344E369-34CD-47F7-9262-657174256645Q38440569-4F4797E0-3480-40B0-9AD0-5B6B774F0AF1Q38531628-B8A21CED-F984-463E-92F9-899C808715DDQ38582278-3F588C93-08E9-46D2-B7EA-B3CFF4C8B1C5Q38643122-35FCE582-A5C5-457C-8924-5962719112ADQ38655371-CCAAFFF9-02A6-46F3-B91E-3E28BCF53A68Q38911703-658FD7B3-0742-4057-A284-D1A6D60148E5Q39205905-F5039D1D-644B-45A1-8AEE-DFE4BF9F3D7EQ41125009-E232EB56-1BE6-49AC-A2DC-15B55DB2254FQ41417654-DD2A8F1F-2EE3-47DE-9474-84C8CF0D1FF8Q41565608-093DF5A5-E39F-4A1E-B892-C51279F95FDCQ42369717-ADB68B98-8AD1-4534-AA65-E380FB54E798Q42378905-0DC9E19E-FFF1-4DC7-9F52-3ED79DEC9CF8Q43905301-4E2260BA-4389-4B53-A8A4-C15E770B5BA3Q45979133-74532D33-E7A8-4814-A4D4-287D87FBE89EQ46062170-58219261-6081-4FC7-9786-CB88BC7C81DAQ46075239-4254DF64-B2A5-449A-B2C6-5BFC92EE333DQ46395558-AC9B0C86-0186-4BF1-8F7A-09A9ECEE4A14Q47209308-8EDE79F4-E768-4578-9A6B-C8942DC6B5A1Q47251148-E19E0857-AA4F-433C-909D-0A98297B9026Q47288847-636E54BF-8DE8-4D3E-BD11-2970F36890A9Q47586103-15FCE0F9-AABB-4511-BC19-C8B8229DB2F4Q47652742-BC16EB05-3CF6-46A2-972B-58F9108223FAQ47864458-DDFF7867-AE27-4D4C-B6B9-07406E633C35Q48007972-A9B6FF08-5F76-4F35-8C81-CDB2C3D527C2Q48903012-2ACC7BBB-ACD4-4AF0-BB95-F6C8FC427A12
P2860
Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary.
description
2013 nî lūn-bûn
@nan
2013年の論文
@ja
2013年論文
@yue
2013年論文
@zh-hant
2013年論文
@zh-hk
2013年論文
@zh-mo
2013年論文
@zh-tw
2013年论文
@wuu
2013年论文
@zh
2013年论文
@zh-cn
name
Controlled growth of high-qual ...... nd imaging its grain boundary.
@en
Controlled growth of high-qual ...... nd imaging its grain boundary.
@nl
type
label
Controlled growth of high-qual ...... nd imaging its grain boundary.
@en
Controlled growth of high-qual ...... nd imaging its grain boundary.
@nl
prefLabel
Controlled growth of high-qual ...... nd imaging its grain boundary.
@en
Controlled growth of high-qual ...... nd imaging its grain boundary.
@nl
P2093
P50
P356
P1433
P1476
Controlled growth of high-qual ...... nd imaging its grain boundary.
@en
P2093
Harold Y Hwang
Hongtao Yuan
Jianping Shi
Mengxi Liu
Xiuju Song
Yanfeng Zhang
P304
P356
10.1021/NN403454E
P407
P577
2013-09-24T00:00:00Z