Multibit MoS2 Photoelectronic Memory with Ultrahigh Sensitivity.
about
Recent Progress on Localized Field Enhanced Two-dimensional Material Photodetectors from Ultraviolet-Visible to Infrared.A General Method for the Chemical Synthesis of Large-Scale, Seamless Transition Metal Dichalcogenide Electronics.Thermodynamically Stable Synthesis of Large-Scale and Highly Crystalline Transition Metal Dichalcogenide Monolayers and their Unipolar n-n Heterojunction Devices.
P2860
Multibit MoS2 Photoelectronic Memory with Ultrahigh Sensitivity.
description
2016 nî lūn-bûn
@nan
2016年の論文
@ja
2016年学术文章
@wuu
2016年学术文章
@zh-cn
2016年学术文章
@zh-hans
2016年学术文章
@zh-my
2016年学术文章
@zh-sg
2016年學術文章
@yue
2016年學術文章
@zh
2016年學術文章
@zh-hant
name
Multibit MoS2 Photoelectronic Memory with Ultrahigh Sensitivity.
@en
Multibit MoS2 Photoelectronic Memory with Ultrahigh Sensitivity.
@nl
type
label
Multibit MoS2 Photoelectronic Memory with Ultrahigh Sensitivity.
@en
Multibit MoS2 Photoelectronic Memory with Ultrahigh Sensitivity.
@nl
prefLabel
Multibit MoS2 Photoelectronic Memory with Ultrahigh Sensitivity.
@en
Multibit MoS2 Photoelectronic Memory with Ultrahigh Sensitivity.
@nl
P2093
P2860
P356
P1433
P1476
Multibit MoS2 Photoelectronic Memory with Ultrahigh Sensitivity.
@en
P2093
Euyheon Hwang
Jeong Ho Cho
Jong Su Kim
Seungwoo Lee
Yongsuk Choi
Youngbin Lee
P2860
P304
P356
10.1002/ADMA.201603571
P407
P577
2016-08-26T00:00:00Z