Solution-processed ambipolar organic field-effect transistors and inverters.
about
Physical Modeling of Activation Energy in Organic Semiconductor Devices based on Energy and Momentum Conservations.Molecular and electronic-structure basis of the ambipolar behavior of naphthalimide-terthiophene derivatives: implementation in organic field-effect transistors.Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities.Rational design of ambipolar organic semiconductors: is core planarity central to ambipolarity in thiophene-naphthalene semiconductors?General observation of n-type field-effect behaviour in organic semiconductors.Ambipolar MoTe2 transistors and their applications in logic circuits.Outlook and emerging semiconducting materials for ambipolar transistors.Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids.A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors.Simultaneous Improvement of Hole and Electron Injection in Organic Field-effect Transistors by Conjugated Polymer-wrapped Carbon Nanotube Interlayers.Pi-conjugated molecules with fused rings for organic field-effect transistors: design, synthesis and applications.Dual-gate thin-film transistors, integrated circuits and sensors.Vibrational spectroscopy as a probe of molecule-based devices.High performance n-type and ambipolar small organic semiconductors for organic thin film transistors.Versatile organic transistors by solution processing.Pro-aromatic and anti-aromatic π-conjugated molecules: an irresistible wish to be diradicals.Ink-Jet Printed CMOS Electronics from Oxide Semiconductors.Ambipolar solution-processed hybrid perovskite phototransistors.Extended conjugated donor-acceptor molecules with E-(1,2-difluorovinyl) and diketopyrrolopyrrole (DPP) moieties toward high-performance ambipolar organic semiconductors.High-hole-mobility field-effect transistors based on co-benzobisthiadiazole-quaterthiophene.A cyano-terminated dithienyldiketopyrrolopyrrole dimer as a solution processable ambipolar semiconductor under ambient conditions.Solution-grown organic single-crystalline p-n junctions with ambipolar charge transport.Cyanated isoindigos for n-type and ambipolar organic thin film transistors.DNA interlayers enhance charge injection in organic field-effect transistors.Chemically Robust Ambipolar Organic Transistor Array Directly Patterned by Photolithography.Twisted but conjugated: building blocks for low bandgap polymers.Controlled growth of large-area high-performance small-molecule organic single-crystalline transistors by slot-die coating using a mixed solvent system.High-performance ambipolar transistors and inverters from an ultralow bandgap polymer.Emeraldicene as an acceptor moiety: balanced-mobility, ambipolar, organic thin-film transistors.Fullerene-based materials for solar cell applications: design of novel acceptors for efficient polymer solar cells--a DFT study.Ambipolarity in benzobisthiadiazole-based donor-acceptor conjugated polymers.Controlling the morphology and crystallization of a thiophene-based all-conjugated diblock copolymer by solvent blending.Well-Balanced Ambipolar Conjugated Polymers Featuring Mild Glass Transition Temperatures Toward High-Performance Flexible Field-Effect Transistors.Tuning of the Electronic Levels of Oligothiophene-Naphthalimide Assemblies by Chemical Modification.Use of heteroaromatic spacers in isoindigo-benzothiadiazole polymers for ambipolar charge transport.Stretchable Organic Semiconductor Devices.Ambipolar Organic Tri-Gate Transistor for Low-Power Complementary Electronics.Molecular length dictates the nature of charge carriers in single-molecule junctions of oxidized oligothiophenes.Spatial extent of wave functions of gate-induced hole carriers in pentacene field-effect devices as investigated by electron spin resonance.Multicomponent semiconducting polymer systems with low crystallization-induced percolation threshold.
P2860
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P2860
Solution-processed ambipolar organic field-effect transistors and inverters.
description
2003 nî lūn-bûn
@nan
2003年の論文
@ja
2003年論文
@yue
2003年論文
@zh-hant
2003年論文
@zh-hk
2003年論文
@zh-mo
2003年論文
@zh-tw
2003年论文
@wuu
2003年论文
@zh
2003年论文
@zh-cn
name
Solution-processed ambipolar organic field-effect transistors and inverters.
@en
Solution-processed ambipolar organic field-effect transistors and inverters.
@nl
type
label
Solution-processed ambipolar organic field-effect transistors and inverters.
@en
Solution-processed ambipolar organic field-effect transistors and inverters.
@nl
prefLabel
Solution-processed ambipolar organic field-effect transistors and inverters.
@en
Solution-processed ambipolar organic field-effect transistors and inverters.
@nl
P2093
P2860
P356
P1433
P1476
Solution-processed ambipolar organic field-effect transistors and inverters.
@en
P2093
Huisman BH
Hummelen JC
Klapwijk TM
Setayesh S
de Leeuw DM
van Veenendaal E
P2860
P2888
P304
P356
10.1038/NMAT978
P407
P577
2003-09-21T00:00:00Z